Wafer-Scale Epitaxy of Flexible Nitride Films with Superior Plasmonic and Superconducting Performance.
Wafer-Scale Epitaxy of Flexible Nitride Films with Superior Plasmonic and Superconducting Performance.
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DOI：
10.1021/acsami.1c18278
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发表时间：
2021-12
影响因子：
9.5
通讯作者：
Ruyi Zhang;Xinyan Li;F. Meng;Jiachang Bi;Shunda Zhang;Shaoqin Peng;Jie Sun;Xinming Wang
中科院分区：
文献类型：
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作者：
Ruyi Zhang;Xinyan Li;F. Meng;Jiachang Bi;Shunda Zhang;Shaoqin Peng;Jie Sun;Xinming Wang
过渡金属氮化物（例如，TiN，ZrN，TaN）是令人难以置信的材料，具有优异的互补金属氧化物半导体兼容性，在耐火等离子体和超导量子电子学中具有卓越的性能。柔性过渡金属氮化物薄膜的外延生长，特别是在晶圆级，对于开发高性能柔性光子学和超导电子学至关重要，但迄今为止的研究很少。本工作报道了2英寸高质量外延。通过反应磁控溅射在柔性氟金云母-云母（F-云母）基底上制备氮化钛（TiN）薄膜。椭圆偏振光谱和电输运的联合测量揭示了TiN/F-mica薄膜由于高的单晶度而具有优越的上级等离子体和超导性能。更有趣的是，这些灵活的TiN薄膜的超导性可以操纵的弯曲状态，并观察到增强的超导临界温度TC在凸形TiN薄膜与面内拉伸应变。密度泛函理论计算表明，应变可以调节电子-声子相互作用强度和由此产生的超导电性的TiN薄膜。这项研究提供了一个很有前途的路线，将可扩展的单晶过渡金属氮化物薄膜与高性能等离子体和超导电子学的柔性电子产品相结合。
Transition-metal nitrides (e.g., TiN, ZrN, TaN) are incredible materials with excellent complementary metal-oxide semiconductor compatibility and remarkable performance in refractory plasmonics and superconducting quantum electronics. Epitaxial growth of flexible transition-metal nitride films, especially at the wafer scale, is fundamentally important for developing high-performance flexible photonics and superconducting electronics, but the study is rare thus far. This work reports the high-quality epitaxy of 2-in. titanium nitride (TiN) films on flexible fluorophlogopite-mica (F-mica) substrates via reactive magnetron sputtering. Combined measurements of spectroscopic ellipsometry and electrical transport reveal the superior plasmonic and superconducting performance of TiN/F-mica films owing to the high single crystallinity. More interestingly, the superconductivity of these flexible TiN films can be manipulated by the bending states, and enhanced superconducting critical temperature TC is observed in convex TiN films with in-plane tensile strain. Density functional theory calculations reveal that the strain can tune the electron-phonon interaction strength and the resultant superconductivity of TiN films. This study provides a promising route toward integrating scalable single-crystalline transition-metal nitride films with flexible electronics for high-performance plasmonics and superconducting electronics.