High-throughput synthesis and characterization of Mg1−xCaxO films as a lattice and valence-matched gate dielectric for ZnO based field effect transistors
High-throughput synthesis and characterization of Mg1−xCaxO films as a lattice and valence-matched gate dielectric for ZnO based field effect transistors
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DOI：
10.1016/j.apsusc.2005.06.040
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发表时间：
2006-01
影响因子：
6.7
通讯作者：
J. Nishii;A. Ohtomo;M. Ikeda;Y. Yamada;K. Ohtani;H. Ohno;M. Kawasaki
中科院分区：
文献类型：
--
作者：
J. Nishii;A. Ohtomo;M. Ikeda;Y. Yamada;K. Ohtani;H. Ohno;M. Kawasaki
利用成分扩散技术，采用脉冲激光沉积法在ZnO薄膜上生长了Mg1−xCaxO固溶体薄膜。所有薄膜均为（111）取向的立方相。尽管结晶度差距很大，但在高达700°C的生长温度下没有发生相分离，而就结晶度而言，最佳生长温度在400°C。利用X射线衍射图谱技术对薄膜的组成分布进行了表征。随着CaO含量的增加，晶格常数和衍射强度均增加。本等价异质界面实现了完美的晶格匹配，通过适当地调整CaO的组成，导致特别感兴趣的ZnO基场效应晶体管。
Using composition-spread technique, we have grown metastable Mg1−xCaxO solid solution films on ZnO layers by pulsed laser deposition. All the films exhibited (111) oriented cubic phase. Despite a large miscibility gap, no phase separation took place at growth temperatures up to 700°C, whereas an optimal growth temperature was found at 400°C in terms of the crystallinity. The composition-spread films were characterized by X-ray diffraction mapping technique. Both lattice parameters and diffraction intensity increased with increasing the CaO composition. The present isovalent heterointerfaces realized the perfect lattice-matching by properly adjusting the CaO composition, leading to particular interest for ZnO based field effect transistors.