Highly Efficient Perovskite-Quantum-Dot Light-Emitting Diodes by Surface Engineering

Highly Efficient Perovskite-Quantum-Dot Light-Emitting Diodes by Surface Engineering
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DOI:
10.1002/adma.201600784
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发表时间:
2016-10-19
期刊:
影响因子:
29.4
通讯作者:
Bakr, Osman M.
Bakr, Osman M.
中科院分区:
材料科学1区
文献类型:
--
作者:
Pan, Jun;Quan, Li Na;Bakr, Osman M.

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提出了一种两步配体交换策略,将全无机钙钛矿(CsPbX 3,X = Br,Cl)量子点(QD)上的长碳链配体替换为卤素离子对配体。与未处理的量子点相比,由卤素离子对封端的量子点制成的绿色和蓝色发光二极管表现出高的外量子效率。
A two-step ligand-exchange strategy is developed, in which the long-carbon-chain ligands on all-inorganic perovskite (CsPbX3, X = Br, Cl) quantum dots (QDs) are replaced with halide-ion-pair ligands. Green and blue light-emitting diodes made from the halide-ion-paircapped quantum dots exhibit high external quantum efficiencies compared with the untreated QDs.