Local characterization and engineering of proximitized correlated states in graphene/NbSe2 vertical heterostructures
Local characterization and engineering of proximitized correlated states in graphene/NbSe2 vertical heterostructures
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DOI：
10.1103/physrevb.102.085429
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发表时间：
2020-05
期刊：
影响因子：
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通讯作者：
Zhiming Zhang;Kenji Watanabe;T. Taniguchi;B. LeRoy
中科院分区：
文献类型：
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作者：
Zhiming Zhang;Kenji Watanabe;T. Taniguchi;B. LeRoy
利用由单层石墨烯、单层hBN和NbSe$2 $组成的货车范德华垂直异质结构，我们对不同构型的诱导关联态进行了局域表征。在4.6 K的温度下，我们已经表明，超导电性和电荷密度波可以诱导在石墨烯从NbSe 2的邻近效应。通过施加垂直磁场，我们对Abrikosov涡旋晶格进行了成像，并提取了邻近超导石墨烯的相干长度。我们进一步表明，通过在石墨烯和NbSe$_2$之间添加单层hBN，可以完全阻断诱导的关联态，这表明了正常金属和超导体之间的隧道势垒和表面条件对于邻近效应的重要性。
Using a van der Waals vertical heterostructure consisting of monolayer graphene, monolayer hBN and NbSe$_2$, we have performed local characterization of induced correlated states in different configurations. At a temperature of 4.6 K, we have shown that both superconductivity and charge density waves can be induced in graphene from NbSe2 by proximity effects. By applying a vertical magnetic field, we imaged the Abrikosov vortex lattice and extracted the coherence length for the proximitized superconducting graphene. We further show that the induced correlated states can be completely blocked by adding a monolayer hBN between the graphene and the NbSe$_2$, which demonstrates the importance of the tunnel barrier and surface conditions between the normal metal and superconductor for the proximity effect.