Radiation degradation characteristics of component subcells in inverted metamorphic triple-junction solar cells irradiated with electrons and protons
Radiation degradation characteristics of component subcells in inverted metamorphic triple-junction solar cells irradiated with electrons and protons
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DOI：
10.1002/pip.2840
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发表时间：
2017-02-01
影响因子：
6.7
通讯作者：
Tajima, Michio
中科院分区：
文献类型：
--
作者：
Imaizumi, Mitsuru;Nakamura, Tetsuya;Tajima, Michio
研究了In0.5Ga0.5P, GaAs, In0.2Ga0.8As和In0.3Ga0.7As单结太阳电池的辐射响应，这些材料也被用作倒变质三结（IMM3J）太阳电池的组件亚电池。这四种类型的电池都是用简单的器件布局和高能电子和质子辐照制备的。获得了辐照前后太阳电池的基本特性，即光照电流电压（LIV）、暗电流电压（DIV）、外量子效率（EQE）和二维光致发光（2D-PL）成像，并对辐照后的变化进行了比较分析。电子和质子对细胞输出参数的影响是位移损伤剂量的函数。研究发现，从材料的角度来看，两种InGaAs电池的耐辐射性能与InGaP和GaAs电池大致相当，这是由于初始材料质量不同造成的。然而，InGaAs电池对电子的辐射电阻相对较低，特别是在短路电流（Isc）下。通过比较Isc和EQE的降解数据，证实了InGaAs中少数载流子扩散长度比InGaP和GaAs的减少幅度更大，导致InGaAs底部亚细胞的产光电流在IMM3J结构中严重退化。此外，发现InGaP和两种InGaAs细胞对Voc的辐射抗性相当，但Voc的辐射响应机制被认为是不同的。需要进一步的分析研究来解释所观察到的细胞的辐射反应。(c) 2016年作者。《光伏进展：研究与应用》由John Wiley & Sons Ltd出版。
The radiation response of In0.5Ga0.5P, GaAs, In0.2Ga0.8As, and In0.3Ga0.7As single-junction solar cells, whose materials are also used as component subcells of inverted metamorphic triple-junction (IMM3J) solar cells, was investigated. All four types of cells were prepared using a simple device layout and irradiated with high-energy electrons and protons. The essential solar cell characteristics, namely, light-illuminated current-voltage (LIV), dark current-voltage (DIV), external quantum efficiency (EQE), and two-dimensional photoluminescence (2D-PL) imaging were obtained before and after irradiation, and the corresponding changes due to the irradiations were compared and analyzed. The degradation of the cell output parameters by electrons and protons were plotted as a function of the displacement damage dose. It was found that the radiation resistance of the two InGaAs cells is approximately equivalent to that of the InGaP and GaAs cells from the materials standpoint, which is a result of different initial material qualities. However, the InGaAs cells show relatively low radiation resistance to electrons especially for the short-circuit current (Isc). By comparing the degradation of Isc and EQE, data, It was confirmed that the greater decrease of minority-carrier diffusion length in InGaAs compared with InGaP and GaAs causes severe degradation in the photo-generation current of the InGaAs bottom subcells in IMM3J structures. Additionally, it was found that the InGaP and two InGaAs cells exhibited equivalent radiation resistance of Voc, but radiation response mechanisms of Voc are thought to be different. Further analytical studies are necessary to interpret the observed radiation response of the cells. (c) 2016 The Authors. Progress in Photovoltaics: Research and Applications published by John Wiley & Sons Ltd.