Switching of nanoscale magnetic elements
Switching of nanoscale magnetic elements
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DOI：
10.1063/1.125428
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发表时间：
1999-11
影响因子：
4
通讯作者：
K. Kirk;J. Chapman;S. McVitie;P. Aitchison;C. Wilkinson
中科院分区：
文献类型：
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作者：
K. Kirk;J. Chapman;S. McVitie;P. Aitchison;C. Wilkinson
我们研究了Co和NiFe薄膜的超小图形元素的磁性。这些元件为矩形，长宽比在3.75-20范围内。最小的元件为200×40 nm 2，它们之间的间隙为50 nm，如果用作离散图案化介质用于磁记录，对应的面密度为27Gbit/in2。采用电子束光刻和剥离图案化的方法制作了这些元件，并在透射电子显微镜上用洛伦兹显微镜获得了高分辨率的磁性图像。原位磁化反转实验表明，开关场对元素宽度的强烈依赖性扩展到了两种材料中最小的元素。40 nm宽的Co元素的切换场为1200 Oe，40 nm宽的NiFe元素的切换场为800 Oe。单元长度和纵横比对计算结果影响不大。
We have investigated the magnetic properties of ultra-small-patterned elements of Co and NiFe thin films. The elements were rectangular with an aspect ratio in the range 3.75–20. The smallest were 200×40 nm2 with 50 nm gaps between them, corresponding to an areal density of 27 Gbit/in2 if used as discrete-patterned media for magnetic recording. The elements were fabricated by electron-beam lithography and lift-off patterning and high-resolution magnetic images were obtained by Lorentz microscopy in a transmission electron microscope. In situ magnetization reversal experiments showed that the strong dependence of the switching field on element width extended to the smallest elements of both materials. The switching field for 40-nm-wide Co elements was 1200 Oe and for 40-nm-wide NiFe elements was 800 Oe. Element length and aspect ratio had little effect.