Solution-processed silicon films and transistors
Solution-processed silicon films and transistors
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DOI：
10.1038/nature04613
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发表时间：
2006-04-06
期刊：
影响因子：
64.8
通讯作者：
Takeuchi, Y
中科院分区：
文献类型：
--
作者：
Shimoda, T;Matsuki, Y;Takeuchi, Y
使用溶液工艺制造电子器件--与传统的真空工艺和气相沉积工艺不同--受到了广泛的关注(1-7)，以期降低加工成本。特别是，使用液态材料印刷半导体器件的能力可能被证明对一些设想的应用至关重要，例如大面积柔性显示器。最近在这一领域的研究主要集中在有机半导体(8-11)，其中一些具有与非晶硅(11)(a-Si)相当的迁移率；但可靠性问题仍然存在。金属硫化物半导体的溶液处理也被报道以制造稳定和高性能的晶体管(12，13)。考虑到从硅制造器件所需的复杂和昂贵的制造工艺，这种材料正在被探索作为硅的可能替代品。然而，如果能够通过溶液工艺来制备高质量的硅膜，这种情况可能会有很大的改变。在这里，我们演示了使用硅烷为基础的液体前体的硅薄膜晶体管(TFT)的溶液处理。利用这种前驱体，我们用旋涂和喷墨打印两种方法制备了多晶硅薄膜，并由此制备出迁移率分别为108 cm(2)V~(-1)的S(-1)和6.5 cm(2)V~(-1)S(-1)的薄膜晶体管。尽管工艺条件尚未优化，但这些迁移率已经大于溶液处理的有机TFT的迁移率，并且超过了a-Si TFT(
The use of solution processes - as opposed to conventional vacuum processes and vapour-phase deposition - for the fabrication of electronic devices has received considerable attention for a wide range of applications(1-7), with a view to reducing processing costs. In particular, the ability to print semiconductor devices using liquid-phase materials could prove essential for some envisaged applications, such as large-area flexible displays. Recent research in this area has largely been focused on organic semiconductors(8-11), some of which have mobilities comparable to that of amorphous silicon(11) (a-Si); but issues of reliability remain. Solution processing of metal chalcogenide semiconductors to fabricate stable and high-performance transistors has also been reported(12,13). This class of materials is being explored as a possible substitute for silicon, given the complex and expensive manufacturing processes required to fabricate devices from the latter. However, if high-quality silicon films could be prepared by a solution process, this situation might change drastically. Here we demonstrate the solution processing of silicon thin-film transistors (TFTs) using a silane-based liquid precursor. Using this precursor, we have prepared polycrystalline silicon ( poly-Si) films by both spin-coating and ink-jet printing, from which we fabricate TFTs with mobilities of 108 cm(2) V-1 s(-1) and 6.5 cm(2) V-1 s(-1), respectively. Although the processing conditions have yet to be optimized, these mobilities are already greater than those that have been achieved in solution-processed organic TFTs, and they exceed those of a-Si TFTs (