Tutorial: Novel properties of defects in semiconductors revealed by their vibrational spectra
Tutorial: Novel properties of defects in semiconductors revealed by their vibrational spectra
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教程：通过振动光谱揭示半导体缺陷的新特性
DOI：
10.1063/1.5011036
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发表时间：
2018
影响因子：
3.2
通讯作者：
W. Fowler
中科院分区：
文献类型：
--
作者：
M. Stavola;W. Fowler
这是对包含轻质量元素的半导体中缺陷的振动光谱的介绍性调查。振动光谱的缺陷，其微观结构的测定，和他们的动态识别的能力说明了几个例子。几个额外的例子进行了讨论，重点是缺陷的性质不明显访问的振动光谱，如杂质的扩散率，负U排序的电子能级，和时间常数的核自旋翻转。尽管如此，这些新的性质已经被振动光谱和理论解释所揭示。
This is an introductory survey of the vibrational spectroscopy of defects in semiconductors that contain light-mass elements. The capabilities of vibrational spectroscopy for the identification of defects, the determination of their microscopic structures, and their dynamics are illustrated by a few examples. Several additional examples are discussed, with a focus on defects with properties not obviously accessible by vibrational spectroscopy, such as the diffusivity of an impurity, the negative U ordering of electronic levels, and the time constant for a nuclear-spin flip. These novel properties have, nonetheless, been revealed by vibrational spectra and their interpretation by theory.
影响因子：
44.1
作者：
Freysoldt, Christoph;Grabowski, Blazej;Van de Walle, Chris G.
通讯作者：
Van de Walle, Chris G.
ZnO 中间隙氢供体和替代氢供体之间的相互作用
影响因子：
3.7
作者：
S. G. Koch;E. V. Lavrov;J. Weber
通讯作者：
J. Weber