Fabrication of S-N-S Junction with the Normal Layer of InSb
Fabrication of S-N-S Junction with the Normal Layer of InSb
复制标题
具有 InSb 正常层的 S-N-S 结的制作
DOI：
10.1143/jjap.30.l1273
复制
发表时间：
1991
影响因子：
1.5
通讯作者：
Hisao Hayakawa Hisao Hayakawa
中科院分区：
文献类型：
--
作者：
T. Hato;H. Akaike;Yoshiaki Takai Yoshiaki Takai;Hisao Hayakawa Hisao Hayakawa
制备了带正常层InSb薄膜的超导体-半导体-超导体弱连接。在4.2 K条件下，Nb电极之间的通道长度为0.19µm，正常电阻为16 Ω，临界超电流为50µA。正常电阻为16 Ω，约为Si块晶体正常层结的40倍。
Superconductor-semiconductor-superconductor weak links with a normal layer of InSb thin film were fabricated. A large normal resistance of 16 Ω and a critical supercurrent of 50 µA were obtained at 4.2 K for a channel length of 0.19 µm between Nb electrodes. The normal resistance of 16 Ω is about 40 times as large as that of a junction with the normal layer of a Si bulk crystal.