Temperature sensitive photoconductivity observed in InN layers
Temperature sensitive photoconductivity observed in InN layers
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在 InN 层中观察到温度敏感光电导
DOI：
10.1063/1.4793190
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发表时间：
2013-02-18
影响因子：
4
通讯作者：
Shen, Bo
中科院分区：
文献类型：
--
作者：
Guo, Lei;Wang, Xinqiang;Shen, Bo
在100- 300 K温度范围内系统地研究了非故意掺杂的n型InN薄膜在超禁带激发（1.53eV）下的光电导特性。在室温下观察到负的光电导，而随着温度的降低，它逐渐变为正的。从负光电导到正光电导的转变温度被发现与剩余电子浓度有很大关系，因为电子浓度越高，转变温度越低。提出了一个包含施主态和复合中心的能带模型，很好地解释了实验观察。(C)2013年美国物理学会。[http：//dx.doi.org/10.1063/1.4793190]
Photoconductivity has been systematically studied in unintentionally doped n-type InN film with super-bandgap excitation (1.53 eV) at temperatures varying in the range of 100-300K. A negative photoconductivity is observed at room temperature, whereas it gradually changes to be positive with decreasing temperature. Transition temperature from negative to positive photoconductivity is found to be greatly related to the residual electron concentration as the higher the electron concentration, the lower the transition temperature. An energy band model including a donor state with large lattice relaxation as well as a recombination center is proposed, which explains the experimental observation well. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4793190]