Bandwidth-controlled metal-insulator transition in epitaxial PrNiO3 ultrathin films induced by dimensional crossover
Bandwidth-controlled metal-insulator transition in epitaxial PrNiO3 ultrathin films induced by dimensional crossover
复制标题
DOI：
10.1063/1.4874980
复制
发表时间：
2014-05
影响因子：
4
通讯作者：
E. Sakai;K. Yoshimatsu;Masatomo Tamamitsu;K. Horiba;A. Fujimori;M. Oshima;H. Kumigashira
中科院分区：
文献类型：
--
作者：
E. Sakai;K. Yoshimatsu;Masatomo Tamamitsu;K. Horiba;A. Fujimori;M. Oshima;H. Kumigashira
研究了在LaAlO_3衬底上外延生长的PrNiO_3超薄膜的厚度特性。应变PrNiO_3薄膜表现出金属行为，没有表现出体相温度驱动的金属-绝缘体转变(MIT)的迹象，而绝缘基态在很小的范围内实现。原位光电子能谱测量表明，观察到的与厚度相关的MIT是由于薄膜的尺寸控制而导致的带宽减小所致。这些结果有力地表明，PrNiO_3薄膜中的MIT可以通过改变外延约束下的尺寸来控制。
The authors have investigated the thickness-dependent physical properties of PrNiO3 ultrathin films epitaxially grown on LaAlO3 substrates. The strained PrNiO3 films exhibit metallic behavior and do not show any indication of temperature-driven metal-insulator transition (MIT) in bulk form, whereas an insulating ground state is realized in a thin limit. In situ photoemission measurements reveal that the observed thickness-dependent MIT is caused by the reduction in bandwidth due to the dimensional control of the films. These results strongly suggest that the MIT in PrNiO3 films can be controlled by changing the dimensionality under epitaxial constraint.