BAND BENDING MODIFIED TUNNELING AT METAL/CONJUGATED POLYMER INTERFACES
BAND BENDING MODIFIED TUNNELING AT METAL/CONJUGATED POLYMER INTERFACES
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DOI：
10.1063/1.114299
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发表时间：
1995-10
影响因子：
4
通讯作者：
E. Ettedgui;H. Razafitrimo;Yongli Gao;B. Hsieh
中科院分区：
文献类型：
--
作者：
E. Ettedgui;H. Razafitrimo;Yongli Gao;B. Hsieh
金属/聚合物界面在聚合物发光二极管中起着重要的作用。帕克最近的输运测量研究提出了金属/聚合物界面上具有三角形势垒隧道的刚性带模型。然而，这一发现与使用表面分析技术观察到的能带弯曲和肖特基势垒形成相矛盾。我们发现，如果在输运数据的解释中包含带弯曲对隧道模型的修正，则可以很好地调和这种明显的矛盾。带弯曲修正隧道可以清晰地描述穿过金属/聚合物界面的隧道过程，对于低场隧道过程具有重要意义。
Metal/polymer interfaces play an important role in polymeric light‐emitting diodes. Recent transport measurement studies by Parker promote a rigid band model with triangular barrier tunneling at the metal/polymer interface. This finding, however, stands in contradiction to the band bending and Schottky barrier formation observed using surface analytical techniques. We found that this apparent contradiction can be nicely reconciled if a modification of the tunneling model by band bending is included in the interpretation of the transport data. Band bending modified tunneling gives a clear physical picture of the tunneling process across the metal/polymer interface and is important for low field tunneling processes.