Efficient and high-power AlGaN-based ultraviolet light-emitting diode grown on bulk GaN
Efficient and high-power AlGaN-based ultraviolet light-emitting diode grown on bulk GaN
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DOI：
10.1063/1.1390485
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发表时间：
2001-08-06
影响因子：
4
通讯作者：
Kobayashi, N
中科院分区：
文献类型：
--
作者：
Nishida, T;Saito, H;Kobayashi, N
通过引入厚体GaN作为衬底，我们提高了AlGaN基紫外（UV）发光二极管（LED）的性能。在裸芯片结构下，注入电流为100 mA时，输出功率超过3 mW。内量子效率估计为80%以上，峰值波长为352 nm。在400 mA的大电流注入下，最大功率超过10 mW，工作电压小于6 V。这些结果表明，通过适当的器件设计和氮化物衬底的组合，高效的UV LED本质上是可能的。通过引入封装技术来提高提取效率，我们将在200-360 nm的宽波长范围内拥有紧凑高效的紫外光源，类似于传统的长波长LED。(C)2001年美国物理学会。
By introducing thick bulk GaN as a substrate, we improved the performance of an AlGaN-based ultraviolet (UV) light-emitting diode (LED). The output power exceeds 3 mW at the injection current of 100 mA under a bare-chip geometry. Internal quantum efficiency is estimated as more than 80%, and the peak wavelength is 352 nm. The maximum power exceeds 10 mW at a large current injection of 400 mA, with an operation voltage of less than 6 V. These results indicate that an efficient UV LED is intrinsically possible by the combination of appropriate device design and the nitride substrate. By introducing packaging technology to enhance extraction efficiency, we will have a compact and efficient UV light source in the wide wavelength range of 200-360 nm, similar to conventional longer-wavelength LEDs. (C) 2001 American Institute of Physics.