Nanoscale Stress Localization Effects on the Radiation Susceptibility of GaN High‐Mobility Transistors
Nanoscale Stress Localization Effects on the Radiation Susceptibility of GaN High‐Mobility Transistors
复制标题
纳米级应力局域化对 GaN 高迁移率晶体管辐射敏感性的影响
DOI：
10.1002/pssr.202200171
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发表时间：
2022
期刊：
影响因子：
--
通讯作者：
Pearton, Stephen
中科院分区：
文献类型：
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作者：
Rasel, Md Abu;Stepanoff, Sergei;Haque, Aman;Wolfe, Douglas E.;Ren, Fan;Pearton, Stephen
由于结构和加工方面的原因，微电子器件中不可避免地会出现纳米级局部机械应力场。它们的整体平均值太小，无法影响带隙或迁移率，但有人提出，应力局部化可以影响辐射下的缺陷成核位置。这是在氮化镓高电子迁移率晶体管（GaN HEMT）上进行的研究。使用透射电子显微镜，我们对原始 HEMT 和 10Mrad 伽马辐照 HEMT 的 AlGaN 层中的应力场进行了空间解析。定量纳米束电子衍射和几何相位分析表明，拉伸应力局部化经历了更高的辐射诱发应变。这一发现可以通过 AlGaN 层中载流子浓度和迁移率的拉应力依赖性来解释。由于伽马辐射损伤仅由高能电子造成，因此 AlGaN 层中拉伸应力较高的局部区域预计更容易受到伽马射线的影响。
Nanoscale localized mechanical stress fields develop unavoidably in microelectronic devices due to structural and processing aspects. Their global average is too small to influence bandgap or mobility, but it is proposed that stress localization can influence defect nucleation sites under radiation. This is investigated on gallium nitride high‐electron‐mobility transistors (GaN HEMTs). Using transmission electron microscopy, we spatially resolved the stress field in the AlGaN layer for both pristine and 10 Mrad gamma‐irradiated HEMTs. The quantitative nanobeam electron diffraction and geometric phase analysis indicate that tensile stressed localizations experience higher radiation‐induced strain. This finding is explained by the tensile stress dependence of the carrier concentration and mobility in the AlGaN layer. Since gamma radiation damage is inflicted by high‐energy electrons only, localized regions of higher tensile stress in the AlGaN layer are expected to be more susceptible to gamma rays.