Room-temperature two-terminal magnetoresistance ratio reaching 0.1% in semiconductor-based lateral devices with L21-ordered Co2MnSi
Room-temperature two-terminal magnetoresistance ratio reaching 0.1% in semiconductor-based lateral devices with L21-ordered Co2MnSi
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DOI：
10.1063/5.0045233
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发表时间：
2021-04
影响因子：
4
通讯作者：
K. Kudo;M. Yamada;S. Honda;Y. Wagatsuma;S. Yamada;K. Sawano;K. Hamaya
中科院分区：
文献类型：
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作者：
K. Kudo;M. Yamada;S. Honda;Y. Wagatsuma;S. Yamada;K. Sawano;K. Hamaya
报道了半导体横向自旋阀器件在室温下最高的两端磁阻(MR)比。根据第一性原理计算，我们预测了插入Fe原子层后由Co2MnSi(CMS)和Ge(111)组成的能量稳定的铁磁-半导体异质界面。利用低温分子束外延技术，我们在Ge(111)衬底上制备了温度为80℃的L21有序CMS外延层，CMS层可用作自旋注入器和探测器。在200°C热处理的CMS/Fe/Ge肖特基隧道接触的n-Ge基侧向自旋阀器件中，获得了高达0.1%的双端MR比。本研究将为室温下获得大MR比的半导体自旋电子器件开辟一条道路。
We report on the highest two-terminal magnetoresistance (MR) ratio at room temperature in semiconductor-based lateral spin-valve devices. From first-principles calculations, we predict energetically stable ferromagnet–semiconductor heterointerfaces consisting of Co2MnSi (CMS) and Ge(111) upon insertion of Fe atomic layers. Using low-temperature molecular beam epitaxy, we demonstrate L21-ordered CMS epilayers at 80 °C on Ge(111), where the CMS layer can be utilized as a spin injector and detector. Two-terminal MR ratios as high as 0.1% are achieved in n-Ge-based lateral spin-valve devices with CMS/Fe/Ge Schottky tunnel contacts annealed at 200 °C. This study will open a path for semiconductor-based spintronic devices with a large MR ratio at room temperature.