Investigation of voltage overshoots in diode triggered silicon controlled rectifiers (DTSCRs) under very fast transmission line pulsing (VFTLP)
Investigation of voltage overshoots in diode triggered silicon controlled rectifiers (DTSCRs) under very fast transmission line pulsing (VFTLP)
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发表时间：
2009-11
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通讯作者：
R. Gauthier;M. Abou-Khalil;K. Chatty;S. Mitra;Junjun Li
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作者：
R. Gauthier;M. Abou-Khalil;K. Chatty;S. Mitra;Junjun Li
研究了DTSCR在VFTLP测试过程中的过冲电压。在65 nm制程中，DTSCR的开启速度约为500ps。在DTSCR ESD器件中并行添加栅氧化物监视器时，DTSCR产生的过冲电压会导致栅氧化物失效。扩展趋势显示，当技术缩减到32 nm节点时，DTSCR的开启速度约为150ps。
Overshoot voltages during VFTLP testing of DTSCRs are investigated. The DTSCRs in a 65nm process turn on at approximately 500ps. The overshoot voltages from DTSCRs are shown to cause gate oxide failures when gate oxide monitors were added in parallel to DTSCR ESD devices. Scaling trends show DTSCRs turning on at approximately 150ps when technologies are scaled down to the 32nm node.