Inkjet-printed p-type CuBI : wearable thin-film transistors
Inkjet-printed p-type CuBI : wearable thin-film transistors
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喷墨印刷 p 型 CuBI：可穿戴薄膜晶体管
DOI：
10.1039/d2ma00425a
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发表时间：
2022
影响因子：
5
通讯作者：
Chang, Chih-Hung
中科院分区：
文献类型：
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作者：
Li, Shujie;Liebe, Brayden;Son, Changjin;Kim, Taehyeon;Surprenant, Shelby;Rochefort, Skip;Lim, Sangwoo;Malhotra, Rajiv;Chang, Chih-Hung
印刷半导体，特别是铜基薄膜，是印刷电子关键部件p型薄膜晶体管的一种廉价和低能耗的制造方法。这条最先进的路线受到可印刷油墨组合物和能够在低加工温度下实现高电性能的油墨组合物之间的差距的限制。我们克服了这一差距，这是基于这样的见解，即CuI的空穴密度可以通过与CuBr的合金化来调节，同时由于CuBr中铜空位的形成能低于CuI中的形成能，因此获得了更高的通断比。我们从二进制金属卤化物中开发出稳定的、可印刷的前体油墨，这些油墨在低至60°C的温度下经过印刷后重结晶成致密的CuBri薄膜。调整Cui/CuBr值会影响电学性能。CuBr0.2I0.8薄膜在CuI基薄膜晶体管中实现了最高的场效应迁移率(9.06±1.94cm2 V−1 S−1)，在150°C的温度下平均开关比达到102-105，这一性能与需要高达400°C的印刷n型铜基薄膜晶体管相当(迁移率=0.22cm2 V−1 S−1，通断比=103)。开发的低温处理能力被用于在60°C的低温下喷墨打印基于纺织品的CuBri薄膜晶体管，以展示在可穿戴电子纺织品中打印互补电路的潜力。
Printing enabled solution processing of semiconductors, especially Cu-based films, is an inexpensive and low-energy fabrication route for p-type thin-film transistors that are critical components of printed electronics. The state-of-the-art route is limited by a gap between ink compositions that are printable and ink compositions that enable high electrical performance at low processing temperatures. We overcome this gap based on the insight that the hole density of CuI can be tuned by alloying with CuBr while achieving a higher on/off ratio due to the lower formation energy of copper vacancies in CuBr than in CuI. We develop stable and printable precursor inks from binary metal halides that undergo post-printing recrystallization into a dense CuBrI thin film at temperatures as low as 60 °C. Adjusting the CuI/CuBr ratio affects the electrical properties. CuBr0.2I0.8 films achieve the highest field-effect mobility among CuI based thin-film transistors (9.06 ± 1.94 cm2 V−1 s−1) and an average on/off ratio of 102–105 at a temperature of 150 °C. This performance is comparable to printed n-type Cu-based TFT that needs temperatures as high as 400 °C. (mobility = 0.22 cm2 V−1 s−1, on/off ratio = 103). The developed low-temperature processing capability is used to inkjet print textile-based CuBrI thin-film transistors at a low temperature of 60 °C to demonstrate the potential for printing complementary circuits in wearable electronic textiles.