Electron transport in metal-amorphous silicon-metal memory devices (マルチメディアストレージ--第5回アジア情報記録技術シンポジウム〔英文〕)
Electron transport in metal-amorphous silicon-metal memory devices (マルチメディアストレージ--第5回アジア情報記録技術シンポジウム〔英文〕)
复制标题
金属-非晶硅-金属存储器件中的电子传输（多媒体存储--第五届亚洲信息存储技术研讨会[英文]）
DOI：
10.11485/itetr.24.68.0_29
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发表时间：
2000
期刊：
影响因子：
--
通讯作者：
M. J. Rose
中科院分区：
文献类型：
--
作者：
J. Hu;J. Hajto;M. J. Rose
测量了掺铬氢化非晶硅-V(Cr/p+a-Si：H/V)模拟记忆开关器件的电流-电压特性，器件的电阻范围从几千欧姆到几百千欧，温度范围从13K到300K。电导的偏置和温度特性与金属绝缘体异质材料(即不连续或颗粒状金属薄膜)的特性相似，并从激活隧道机制的角度进行了分析。提出了一种用于Cr/p+a-Si：H/V开关器件的改进的丝状结构。分析和讨论了嵌入金属粒子对存储器开关的影响。
Current-voltage characteristics of Cr-doped hydrogenated amorphous silicon-V (Cr/p+a-Si:H/V) analogue memory switching devices have been measured over a wide range of device resistance from several kilo-ohms to several hundred kilo-ohms, and over a temperature range from 13 K to 300 K. Both the bias and temperature dependence of the conductance show similar characteristics to that of metal-insulator heterogeneous materials (i.e. discontinuous or granular metallic films), which are analysed in terms of activated tunnelling mechanism. A modified filamentary structure for the Cr/p+a-Si:H/V switching devices is proposed. The influence of embedded metallic particles on memory switching is analysed and discussed.