An ultrathin integrated nanoelectromechanical transducer based on hafnium zirconium oxide
An ultrathin integrated nanoelectromechanical transducer based on hafnium zirconium oxide
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DOI：
10.1038/s41928-019-0305-3
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发表时间：
2019-11-01
影响因子：
34.3
通讯作者：
Tabrizian, Roozbeh
中科院分区：
文献类型：
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作者：
Ghatge, Mayur;Walters, Glen;Tabrizian, Roozbeh
可以在超高频（3-30 GHz）或极高频（30-300 GHz）范围内工作的纳米机械谐振器可以用于开发稳定的频率参考，宽带频谱处理器和高分辨率谐振传感器。然而，这样的操作需要将机械谐振器的尺寸减小到几十纳米，并且当前的设备通常依赖于换能器，对于换能器而言，小型化和芯片级集成是具有挑战性的。在这里，我们表明，集成的纳米机电换能器可以创建使用10纳米厚的铁电铪锆氧化物（Hf0.5Zr0.5O2）薄膜。传感器集成在氮化硅和氮化铝膜上，可以产生频率为340 kHz至13 GHz的谐振器，频率品质因数产品高达3.97 x 10（12）。使用电气和光学探针，我们表明，机电换能行为的Hf0.5Zr0.5O2膜的电致伸缩效应的基础上，并突出的作用，非线性机电散射的谐振器的操作。
Nanomechanical resonators that can operate in the super high frequency (3-30 GHz) or the extremely high frequency (30-300 GHz) regime could be of use in the development of stable frequency references, wideband spectral processors and high-resolution resonant sensors. However, such operation requires the dimensions of the mechanical resonators to be reduced to tens of nanometres, and current devices typically rely on transducers, for which miniaturization and chip-scale integration are challenging. Here, we show that integrated nanoelectromechanical transducers can be created using 10-nm-thick ferroelectric hafnium zirconium oxide (Hf0.5Zr0.5O2) films. The transducers are integrated on silicon and aluminium nitride membranes, and can yield resonators with frequencies from 340 kHz to 13 GHz and frequency-quality-factor products of up to 3.97 x 10(12). Using electrical and optical probes, we show that the electromechanical transduction behaviour of the Hf0.5Zr0.5O2 film is based on the electrostrictive effect, and highlight the role of nonlinear electromechanical scattering in the operation of the resonator.