Hall effect measurements using polycrystalline pentacene field-effect transistors on plastic films
Hall effect measurements using polycrystalline pentacene field-effect transistors on plastic films
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DOI：
10.1063/1.2215482
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发表时间：
2006-06
影响因子：
4
通讯作者：
T. Sekitani;Yasushi Takamatsu;S. Nakano;T. Sakurai;T. Someya
中科院分区：
文献类型：
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作者：
T. Sekitani;Yasushi Takamatsu;S. Nakano;T. Sakurai;T. Someya
我们使用在塑料基膜上制造的多晶并五苯场效应管进行霍尔效应测量。在线性范围内，场效应迁移率为0.4cm2/vs。我们检测到了霍尔电压的变化，它随磁场(B)线性增加，在B=9T时达到700μV。根据评价，霍尔迁移率为0.4±0.1cm2/vs。此外，我们观察到霍尔常数的倒数比由栅极电压估计的电荷量大两到三倍，这表明了多晶晶界之间跳跃输运的重要性。
We performed Hall effect measurements using polycrystalline pentacene field-effect transistors manufactured on plastic base films. The field-effect mobility is 0.4cm2∕Vs in a linear regime. We detected a change in the Hall voltage, which linearly increased with the magnetic field (B) and reached 700μV at B=9T. From the evaluations, the Hall mobility was 0.4±0.1cm2∕Vs. Furthermore, we observed that the inverse of the Hall constant was two or three times larger than the amount of charge estimated from the gate voltage, indicating the importance of hopping transport between polycrystalline grain boundaries.