Influence of Ce doping on structural and photoelectric properties of CuInS2 thin films
Influence of Ce doping on structural and photoelectric properties of CuInS2 thin films
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DOI：
10.1063/1.4931156
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发表时间：
2015-09
影响因子：
3.2
通讯作者：
Jun Zhu;Lingling Xiao;T. Ding;Wang Yanlai;Yue Fan
中科院分区：
文献类型：
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作者：
Jun Zhu;Lingling Xiao;T. Ding;Wang Yanlai;Yue Fan
采用粉末冶金法制备了Ce掺杂的CuInS 2薄膜。X射线衍射和扫描电子显微镜测试表明，所制备的CuIn 1 − xCexS 2样品具有良好的结晶性，在550 °C烧结时结晶为黄铜矿结构。通过X射线光电子能谱（XPS）证实了Ce 3+在基质材料中的存在。在UV-Vis-NIR吸收光谱中，在1710 nm（0.73 eV）和1955 nm（0.63 eV）处观察到两个光子吸收峰。这种行为表明，由于铈的掺入，在CuInS 2半导体的禁带中形成了中间带。随着铈含量的增加，CuIn 1 − xCexS 2薄膜的光学带隙在1.38 eV到1.23 eV的范围内被调谐。适量的铈掺杂，特别是x = 0.1时，可以提高材料的电导率。
Cerium doped CuInS2 thin films were successfully fabricated by a powder metallurgy method. X-ray diffraction and scanning electron microscope measurements showed that the as-prepared CuIn1−xCexS2 samples are of good crystallinity and crystallize with chalcopyrite structure when sintering at 550 °C. The presence of Ce3+ in host material was conformed by X-ray photoelectron spectroscopy. Two subband photon absorption peaks were observed at 1710 nm (0.73 eV) and 1955 nm (0.63 eV) in the UV–Vis–NIR absorption spectrum. This behavior could suggest that an intermediate band forms in the forbidden band of CuInS2 semiconductor due to cerium incorporation. The optical bandgap of CuIn1−xCexS2 films was tuned in the range of 1.38 eV to 1.23 eV with increasing cerium content. And the electrical conductivity could be improved if doped moderate cerium content, especially x = 0.1.