Temperature and doping-dependent resistivity of Ti/Au/Pd/Au multilayer ohmic contact to n-GaN
Temperature and doping-dependent resistivity of Ti/Au/Pd/Au multilayer ohmic contact to n-GaN
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Ti/Au/Pd/Au 多层欧姆接触与 n-GaN 的温度和掺杂相关电阻率
DOI：
10.1063/1.1471390
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发表时间：
2002
影响因子：
3.2
通讯作者：
S. Mohammad
中科院分区：
文献类型：
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作者：
Changzhi Lu;Hong;Xiaoliang Lv;Xuesong Xie;S. Mohammad
研究了Ti/Au/Pd/Au多层欧姆触点比接触电阻率的温度（测量温度和退火温度）与掺杂的关系。触点的金属化涉及在n-GaN上沉积复合金属层Ti/Au/Pd/Au （200 A/600 A/400 A/500 A）。当接触点在800℃空气中退火30 s时，观察到接触电阻率随着n-GaN掺杂浓度的增加而降低，但随着接触点测量温度的增加而增加。在传输线测量方法框架内，掺杂ND=6×1017 cm−3时的比接触电阻率为ρS=1.0×10−4 Ω cm2，掺杂ND=1020 cm−3时的比接触电阻率为ρS=2.38×10−9 Ω cm2。ND=6×1017 cm−3的电阻率ρS=1.0×10−4 Ω cm2经过二次退火后，ρS≈8×10−7 Ω cm2。因此，退火，有时不止一次，似乎在形成电阻率的最佳值方面起着重要作用。潜在的物理原因…
The temperature (both measurement temperature and annealing temperature) and doping dependence of specific contact resistivity of Ti/Au/Pd/Au multilayer ohmic contact have been studied. The metallization for the contact involves the deposition of the composite metal layer Ti/Au/Pd/Au (200 A/600 A/400 A/500 A) on n-GaN. When the contacts were annealed at 800 °C for 30 s in air it was observed that the contact resistivity decreases with increasing doping concentration of the n-GaN, but increases with increasing measurement temperature of the contact. Within the framework of the transmission line measurement method, the specific contact resistivity for doping ND=6×1017 cm−3 was ρS=1.0×10−4 Ω cm2, and for doping ND=1020 cm−3 was ρS=2.38×10−9 Ω cm2. The resistivity ρS=1.0×10−4 Ω cm2 for ND=6×1017 cm−3 decreased to ρS≈8×10−7 Ω cm2 after a second annealing. Thus annealing, some times more than once, appears to play an important role in shaping the best value of the resistivity. The physical cause underlying the ...
S. Shikii 等：“使用飞秒激光脉冲激发的太赫兹辐射观察 Yba_2-Cu_3O_<7-8> 薄膜中的超电流分布”Appl。
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