Surface charge accumulation and electrochemical protonation of transition metal oxides using water-infiltrated nanoporous glass
Surface charge accumulation and electrochemical protonation of transition metal oxides using water-infiltrated nanoporous glass
复制标题
DOI：
10.1088/1361-6641/ab51b2
复制
发表时间：
2019-11
影响因子：
1.9
通讯作者：
T. Katase;H. Ohta
中科院分区：
文献类型：
--
作者：
T. Katase;H. Ohta
由质子（H+）和羟基离子（OH）的两个强的电化活性药物组成的水预计将是强的还原，并且是过渡金属氧化物（TMOS）的氧化剂。用于使用三端薄膜晶体管（TFT）结构进行TMO的光学，电子和磁性修饰，并使用水浸润的纳米孔玻璃无形12CAO·7Al2O3作为栅极在本文中，我们使用我们发达的TFT结构与水浸入纳米多孔玻璃进行了电子特性调制，并使用SRTIO3单晶和VO2外生膜作为TMO通道进行了不同的操作机制TMO可以通过两种方式调节，具体取决于TMOS的传导带最小（ECBM）和氢产生（EH2）。在SRTIO3的情况下，EH2高于EH2时，在TMO表面形成了二维电子气体，当时静电电荷积累和随后的氧化还原反应在此情况下。在VO2中，质子化驱动金属 - 绝缘体的转化是通过渗透到散装区域的渗透。高性能热电材料和后者适用于使用非挥发性操作的电染料装置的开发。
Water, composed of two strong electro-chemically active agents of proton (H+) and hydroxyl ion (OH–), is expected to be a strong reductant as well as oxidant for transition metal oxides (TMOs). We have investigated the applicability of water for the optical, electronic, and magnetic property modification of TMOs using three-terminal thin-film transistor (TFT) structure with water-infiltrated nanoporous glass of amorphous 12CaO · 7Al2O3 as the gate insulator. In this paper, we review the electronic property modulation of TMOs using our developed TFT structure with water-infiltrated nanoporous glass and discuss the different operation mechanism using the examples of SrTiO3 single crystal and VO2 epitaxial film as the TMO channels. Electronic properties of the TMOs can be modulated in two ways depending on the magnitude relationship between the energy level of conduction band minimum (ECBM) of TMOs and hydrogen generation potential (EH2). When ECBM is higher than EH2 in the case of SrTiO3, two-dimensional electron gas layer is formed at the TMO surface by the electrostatic charge accumulation and subsequent redox reaction. When ECBM is lower than EH2 in the case of VO2, protonation driven metal–insulator conversion of TMOs occurs by the penetration of H+ into the bulk region. The former approach may accelerate the development of nanostructures of high performance thermoelectric materials and the latter is applicable for the development of electrochromic device with non-volatile operation.