Free carrier lifetime modification in silicon
Free carrier lifetime modification in silicon
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DOI：
10.1117/12.810907
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发表时间：
2009-02
期刊：
影响因子：
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通讯作者：
N. Wright;D. Thomson;K. Litvinenko;W. Headley;A. Smith;A. Knights;J. Deane;F. Gardes;G. Mashanovich;R. Gwilliam;G. Reed
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文献类型：
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作者：
N. Wright;D. Thomson;K. Litvinenko;W. Headley;A. Smith;A. Knights;J. Deane;F. Gardes;G. Mashanovich;R. Gwilliam;G. Reed
我们研究了硅离子辐照对硅肋波导中自由载流子寿命和传播损耗的影响，以及其降低双光子吸收（TPA）产生的自由载流子密度的能力，这是晶体硅中拉曼过程的不良影响。我们的实验结果表明，硅离子注入可以显着降低自由载流子寿命。如果正确选择辐照能量和剂量，则可以将注入的硅离子的相关过量光吸收保持在较低水平。硅肋波导拉曼放大的模拟表明，在某些情况下可以实现净增益，而不需要反向偏压的集成二极管来清除光生自由载流子。
We investigate the effects of silicon ion irradiation on free carrier lifetime and propagation loss in silicon rib waveguides, and thus its ability to reduce the density of two-photon-absorption (TPA) generated free carriers, an undesired effect of the Raman process in crystalline silicon. Our experimental results show that free carrier lifetime can be reduced significantly by silicon ion implantation. Associated excess optical absorption from the implanted silicon ions can be kept low if irradiation energy and dose are correctly chosen. Simulations of Raman amplification in silicon rib waveguides suggest that net gain can be achieved in certain cases without the need for an integrated diode in reverse bias to sweep out the photo-generated free carriers.