The addition of Sb as a surfactant to GaN growth by metal organic vapor phase epitaxy
The addition of Sb as a surfactant to GaN growth by metal organic vapor phase epitaxy
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DOI：
10.1063/1.1495891
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发表时间：
2002-08
影响因子：
3.2
通讯作者：
L. Zhang;H. Tang;J. Schieke;M. Mavrikakis;T. Kuech
中科院分区：
文献类型：
--
作者：
L. Zhang;H. Tang;J. Schieke;M. Mavrikakis;T. Kuech
研究了等电子中心Sb对GaN外延层结构和性能的影响。气相Sb浓度通过在宽范围的浓度内改变三乙基锑/三甲基镓的摩尔比而变化，同时保持其它生长参数恒定。Sb的添加略有改善的光学和结构特性的GaN外延层在低水平的Sb掺入，特别是在高V/III族比条件下生长的薄膜。Sb的加入导致GaN表面形貌的变化，这是进一步探索的横向外延过生长（LEO）技术通过生长速率和小面形成的变化。Sb在气相中的存在大大提高了横向过生长速率，并改变了形成的主导方面。垂直刻面的LEO增长出现了Sb的添加条件下，通常产生倾斜的侧壁。而Sb改变了生长面的存在。
The role and effect of the isoelectronic center Sb on the structure and properties of GaN epilayers have been investigated. The gas phase Sb concentration was varied by changing the triethyl antimony/trimethyl gallium mole ratio over a wide range of concentrations while keeping other growth parameters constant. The Sb addition slightly improved the optical and structural properties of GaN epilayer at a low level of Sb incorporation, especially for the films grown under a high group V/III ratio conditions. The addition of Sb resulted in changes in GaN surface morphology, which was further explored by the lateral epitaxy overgrowth (LEO) technique through the changes in the growth rates and the facet formation. The presence of Sb in the gas phase greatly enhanced the lateral overgrowth rate and altered the formation of the dominant facets. Vertical facets to the LEO growth appeared with the addition of Sb under conditions that normally produced sloped sidewalls. While Sb altered the growth facet present dur...