Titanium oxynitride thin films sputter deposited by the reactive gas pulsing process
Titanium oxynitride thin films sputter deposited by the reactive gas pulsing process
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DOI：
10.1016/j.apsusc.2006.12.004
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发表时间：
2007-04-15
影响因子：
6.7
通讯作者：
Takadoum, Jamal
中科院分区：
文献类型：
--
作者：
Chappe, Jean-Marie;Martin, Nicolas;Takadoum, Jamal
采用直流反应溅射法，以钛金属靶材、氩气作为等离子体气体、氮气和氧气作为反应气体，成功地制备了氮氧化钛薄膜。每次沉积期间氮气分压保持恒定，而氧气流速使用方形模式脉动。该研究包括分析脉冲速率的形状对这些薄膜的物理性能的影响。为了调节准金属浓度以获得具有宽范围氧氮比的薄膜，采用了反应气体脉冲工艺（RGPP）。在此过程中，氧气流量根据占空比 alpha = t(ON)IT 周期性地“打开”和“关闭”。随着占空比的增加，根据温度测量的薄膜电导率逐渐从金属性（sigma(300K) = 4.42 x 10(4) S m(-1)）变为半导体行为（sigma(300K) = 7.14 S m(-1)）。研究了薄膜的纳米硬度（H-n）和约化杨氏模量（E-r）等机械性能。通过纳米压痕在10%深度处获得的H-n和E-r的实验值分别为15.8至5.2 GPa和273至142 GPa。 H-n 和 E-r 随占空比的变化是相似的。观察到占空比 alpha 有规律地下降
DC reactive sputtering was used to successfully make thin films of titanium oxynitride using titanium metallic target, argon as plasma gas and nitrogen and oxygen as reactive gases. The nitrogen partial pressure was kept constant during every deposition whereas oxygen flow rate was pulsed using a square pattern. The study consisted in analysing the influence of the shape of the pulsed rate on physical properties of these films. In order to adjust the metalloid concentration to get films with a wide range of oxygen-to-nitrogen ratios, the reactive gas pulsing process (RGPP) was used. In this process, the oxygen flow switches "on" and "off" periodically according to a duty cycle alpha = t(ON)IT. Electrical conductivity of films measured against temperature was gradually modified from metallic (sigma(300K) = 4.42 x 10(4) S m(-1)) to semi-conducting behaviour (sigma(300K) = 7.14 S m(-1)) with an increasing duty cycle. Mechanical properties like nanohardness (H-n) and reduced Young's modulus (E-r) of the films were investigated. Experimental values of H-n and E-r obtained by nanoindentation at 10% depth ranged from 15.8 to 5.2 GPa and from 273 to 142 GPa, respectively. Evolutions of H-n and E-r against duty cycle were similar. A regular decrease was observed for duty cycle alpha