Buffer transport mechanisms in intentionally carbon doped GaN heterojunction field effect transistors
Buffer transport mechanisms in intentionally carbon doped GaN heterojunction field effect transistors
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DOI：
10.1063/1.4885695
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发表时间：
2014-06-30
影响因子：
4
通讯作者：
Kuball, Martin
中科院分区：
文献类型：
--
作者：
Uren, Michael J.;Caesar, Markus;Kuball, Martin
依赖于温度的脉冲和斜坡衬底偏置测量用于开发一个详细的了解在缓冲层中的碳掺杂GaN功率异质结场效应晶体管的垂直载流子输运。在这些器件中使用碳掺杂GaN和多层AlGaN合金来提供具有高击穿电压能力的绝缘和应变消除缓冲。然而，对其运作的详细物理机制仍缺乏了解。在最低电场下（
Temperature dependent pulsed and ramped substrate bias measurements are used to develop a detailed understanding of the vertical carrier transport in the buffer layers in a carbon doped GaN power heterojunction field effect transistor. Carbon doped GaN and multiple layers of AlGaN alloy are used in these devices to deliver an insulating and strain relieved buffer with high breakdown voltage capability. However, understanding of the detailed physical mechanism for its operation is still lacking. At the lowest electric fields (