Ti-Si-N diffusion barriers between silicon and copper
Ti-Si-N diffusion barriers between silicon and copper
复制标题
硅和铜之间的 Ti-Si-N 扩散势垒
DOI：
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发表时间：
1994
影响因子：
4.9
通讯作者：
M. Nicolet
中科院分区：
文献类型：
--
作者：
J. Reid;X. Sun;E. Kolawa;M. Nicolet
从Ti/sub 5/Si/sub 3/靶反应溅射的Ti-Si-N薄膜被评估为硅衬底和铜覆盖层之间的扩散阻挡层。通过对浅结二极管的测试，100 nm的Ti/sub 34/Si/sub 23/N/sub 43/阻挡层能够在真空中850/spl deg/C/30 min退火期间防止铜到达硅衬底。一个10纳米的膜防止扩散高达650/spl度/C/30分钟。通过高分辨率透射电子显微镜，Ti/sub 34/Si/sub 23/N/sub 43/主要由纳米相TiN晶粒约2纳米的大小。<<ETX>>
Thin films of Ti-Si-N, reactively spattered from a Ti/sub 5/Si/sub 3/ target, are assessed as diffusion barriers between silicon substrates and copper overlayers. By tests on shallow-junction diodes, a 100 nm Ti/sub 34/Si/sub 23/N/sub 43/ barrier is able to prevent copper from reaching the silicon substrate during a 850/spl deg/C/30 min anneal in vacuum. A 10 nm film prevents diffusion up to 650/spl deg/C/30 min. By high-resolution transmission electron microscopy, Ti/sub 34/Si/sub 23/N/sub 43/ predominantly consists of nanophase TiN grains roughly 2 nm in size.<<ETX>>