InGaN Solar Cells: Present State of the Art and Important Challenges

InGaN Solar Cells: Present State of the Art and Important Challenges
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DOI:
10.1109/jphotov.2012.2193384
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发表时间:
2012-07-01
影响因子:
3
通讯作者:
Yamamoto, Akio
Yamamoto, Akio
中科院分区:
工程技术3区
文献类型:
--
作者:
Bhuiyan, Ashraful Ghani;Sugita, Kenichi;Yamamoto, Akio

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太阳能电池是一种有前途的可再生和无碳电能资源,以解决化石燃料短缺和全球变暖。使用常规III-V族半导体化合物作为光伏材料,最近已经实现了超过40%的能量转换效率。将InN带隙修正为更窄的值,将III族氮化物合金系统的基本带隙扩展到更宽的光谱区域(从InN的0.64 eV到GaN的3.4 eV或AlN的6.2 eV),提高了各种新应用的可能性。InxGa 1-xN材料系统的可调谐带隙、预测的高抗辐射性和强吸收系数对于高效光伏系统是有希望的。在过去的几年中,对InxGa 1-xN太阳能电池的兴趣一直是显著的。与使用Si和其他III-V族材料的现有太阳能电池相比,使用InxGa 1-xN材料的高性能太阳能电池的开发是最重要的目标之一。在实现这一目标的过程中,我们做出了重大努力,取得了重大进展,同时也面临着巨大的机遇和挑战。在本文中,我们提出了一个审查的最新状态的In xGa 1-xN基太阳能电池的艺术。最重要的挑战,对高效率的InxGa 1-xN基太阳能电池的背景下,最近的结果进行了讨论。
Solar cells are a promising renewable and carbon-free electric energy resource to address the fossil-fuel shortage and global warming. Energy conversion efficiencies over 40% have been recently achieved using conventional III-V semiconductor compounds as photovoltaic materials. The revision of InN bandgap to a much narrower value has extended the fundamental bandgap of the group III-nitride alloy system over a wider spectral region (from 0.64 eV for InN to 3.4 eV for GaN or 6.2 eV for AlN), raising the possibility of a variety of new applications. The tunable bandgap, predicted high radiation resistance, and strong absorption coefficient of the InxGa1-x N material system are promising for high-efficiency photovoltaic systems. During the past few years, the interest in InxGa1-x N solar cells has been remarkable. The development of high-performance solar cells using InxGa1-x N materials is one of the most important goals when compared with the existing solar cells using Si and other III-V materials. Significant efforts and progress have been made toward this goal, while great opportunities and grand challenges coexist. In this paper, we present a review on the present state of the art of InxGa1-x N-based solar cells. The most important challenges toward the high-efficiency InxGa1-x N-based solar cells are discussed in the context of the recent results.