An electrically driven quantum dot-in-nanowire visible single photon source operating up to 150K
An electrically driven quantum dot-in-nanowire visible single photon source operating up to 150K
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DOI：
10.1063/1.4848195
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发表时间：
2013-12-09
影响因子：
4
通讯作者：
Bhattacharya, Pallab
中科院分区：
文献类型：
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作者：
Deshpande, Saniya;Bhattacharya, Pallab
我们演示了从嵌入GaN纳米线结二极管中的单个InGaN量子点发出高达150K的电泵浦单光子发射。采用分子束外延的方法在硅上生长了InGaN纳米线p-n结。单个纳米线中点的激子电致发光在绿色光谱范围内（λ类似于520 nm），并且在150k以下可检测到。在环境温度为125K的激子能量下进行的二阶自相关测量显示，背景校正后的g((2))(0)等于0.35，表明主导单光子发射。在这些条件下，由于大的纳米线串联电阻引起的焦耳加热，估计稳态纳米线温度为150K。时间分辨光致发光测量产生的激子辐射寿命为1.1 ns。(C) 2013 AIP出版有限责任公司
We demonstrate electrically pumped single photon emission up to 150K from a single InGaN quantum dot embedded in a GaN nanowire junction diode. The InGaN dot-in-nanowire p-n junctions were grown on silicon by molecular beam epitaxy. The exciton electroluminescence from individual dot-in-nanowires is in the green spectral range (lambda similar to 520 nm) and is detectable up to 150 K. Second order autocorrelation measurements performed at the exciton energy at an ambient temperature of 125K show a background corrected g((2))(0) equal to 0.35, indicating dominant single photon emission. The steady state nanowire temperature under these conditions is estimated to be 150K due to Joule heating induced by the large nanowire series resistance. Time resolved photoluminescence measurements yield an exciton radiative lifetime of 1.1 ns. (C) 2013 AIP Publishing LLC.