Mechanical flexible PI/MWCNTs nanocomposites with high dielectric permittivity by electrospinning
Mechanical flexible PI/MWCNTs nanocomposites with high dielectric permittivity by electrospinning
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通过静电纺丝制备具有高介电常数的机械柔性 PI/MWCNTs 纳米复合材料
DOI：
10.1016/j.eurpolymj.2014.07.028
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发表时间：
2014-10
影响因子：
6
通讯作者：
Hou Haoqing
中科院分区：
文献类型：
--
作者：
Xu Wenhui;Ding Yichun;Jiang Shaohua;Zhu Jian;Ye Wan;Shen Youliang;Hou Haoqing
采用静电纺丝和热压法制备了具有良好机械柔性的高介电常数聚酰亚胺/碳纳米管（PI/MWCNTs）纳米复合材料。通过扫描电子显微镜（SEM）和透射电子显微镜（TEM）证实了多壁碳纳米管在PI纳米纤维和基体中的均匀性。PI/MWCNTs纳米复合材料在12-14体积% MWCNTs浓度的逾渗阈值下表现出147-161的高介电常数（在1 kHz下）和低于逾渗阈值的低介电损耗。多壁碳纳米管浓度为20体积%的PI/多壁碳纳米管纳米复合材料具有最高的介电常数217（在1 kHz），这是57.5倍高于纯PI。与纯PI的最大储能密度（0.404 J/cm 3）相比，在PI中掺入12vol%的MWCNTs可获得1.957 J/cm 3的最大储能密度。PI/MWCNTs纳米复合材料（14 vol%）具有良好的机械柔韧性，拉伸强度、断裂伸长率和韧性分别大于90 MPa、12.8%和5.0 J/g，并且具有优异的热稳定性，5%失重温度大于560 °C。因此，这种高性能的PI/CNTs纳米复合材料将是现代高温微电子领域的良好候选者。
High permittivity polyimide/carbon nanotubes (PI/MWCNTs) nanocomposites with good mechanical flexibility were prepared by electrospinning and hot-pressing. The homogeneity of MWCNTs in PI nanofibers and matrix were confirmed by scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The PI/MWCNTs nanocomposites showed high dielectric permittivity of 147–161 (at 1 kHz) at percolation threshold of 12–14 vol% concentration of MWCNTs and low dielectric loss below the percolation threshold. The PI/MWCNTs nanocomposites with 20 vol% concentration of MWCNTs had the highest dielectric permittivity of 217 (at 1 kHz), which was 57.5 times higher than the pure PI had. Compared to the maximum energy storage density of pure PI (0.404 J/cm3), the best maximum energy storage density of 1.957 J/cm3was achieved by incorporating 12 vol% of MWCNTs into PI. The PI/MWCNTs nanocomposites (14 vol%) showed good mechanical flexibility with tensile strength, elongation at break and toughness more than 90 MPa, 12.8% and 5.0 J/g respectively and excellent thermal stability with 5% weight loss temperature of more than 560 °C. Therefore, this high performance PI/CNTs nanocomposites would be good candidates for modern microelectronics in high temperature areas.
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影响因子：
--
作者：
Jaeger, R;Bergshoef, MM;Vancso, GJ
通讯作者：
Vancso, GJ
影响因子：
3.2
作者：
Xiusheng Guo;Demei Yu;Jingshen Wu;C. Min;Rong Guo
通讯作者：
Xiusheng Guo;Demei Yu;Jingshen Wu;C. Min;Rong Guo
金属-半导体Zn-ZnO核壳结构增强铁电聚合物复合材料的介电性能
影响因子：
9.5
作者：
Zhang, Ye;Wang, Yao;Bai, Jinbo
通讯作者：
Bai, Jinbo
影响因子：
9.5
作者：
Jiang, Shaohua;Hou, Haoqing;Agarwal, Seema
通讯作者：
Agarwal, Seema
影响因子：
9.1
作者：
W. Bauhofer;J. Kovacs
通讯作者：
W. Bauhofer;J. Kovacs