Multimaterial Self-Aligned Nanopatterning by Simultaneous Adjacent Thin Film Deposition and Etching
Multimaterial Self-Aligned Nanopatterning by Simultaneous Adjacent Thin Film Deposition and Etching
复制标题
通过同时相邻薄膜沉积和蚀刻进行多材料自对准纳米图案化
DOI：
10.1021/acsnano.1c04086
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发表时间：
2021
期刊：
影响因子：
17.1
通讯作者：
Parsons, Gregory N.
中科院分区：
文献类型：
--
作者：
Song, Seung Keun;Kim, Jung-Sik;Margavio, Hannah R.;Parsons, Gregory N.
电子电路中的印刷元件尺寸接近10 nm，但光刻过程中特征对准的固有可变性对持续的器件缩放构成了基本障碍。正在引入基于沉积的自对准图案化，但核缺陷仍然是一个首要问题。这项工作介绍了低温化学自对准薄膜生长通过同时薄膜沉积和蚀刻在相邻区域的纳米图案化表面。在沉积过程中，避免了成核缺陷在非生长区域，因为沉积反应物是局部消耗viaacrificial蚀刻。对于一系列的材料和工艺条件，热力学建模证实，沉积和蚀刻都是积极有利的。我们展示了在220 °C下钨的纳米级图案化，同时蚀刻TiO 2。牺牲TiO 2层的区域选择性沉积（ASD）在一个起始图案上产生两种材料的自对准图案化的正交序列，即，SiO2上的TiO 2 ASD，然后Si-H上的W ASD。实验还表明，通过在240 °C下在Al 2 O3上沉积AlF 3，同时对牺牲ZnO进行原子层蚀刻，可以实现自对准电介质图案化。同时沉积和蚀刻为电子和其他纳米级系统的低温自下而上的自对准图案化提供了机会。
Printed component sizes in electronic circuits are approaching 10 nm, but inherent variability in feature alignment during photolithography poses a fundamental barrier for continued device scaling. Deposition-based self-aligned patterning is being introduced, but nuclei defects remain an overarching problem. This work introduces low-temperature chemically self-aligned film growthviasimultaneous thin film deposition and etching in adjacent regions on a nanopatterned surface. During deposition, nucleation defects are avoided in nongrowth regions because deposition reactants are locally consumedviasacrificial etching. For a range of materials and process conditions, thermodynamic modeling confirms that deposition and etching are both energetically favorable. We demonstrate nanoscale patterning of tungsten at 220 °C with simultaneous etching of TiO2. Area selective deposition (ASD) of the sacrificial TiO2layer produces an orthogonal sequence for self-aligned patterning of two materials on one starting pattern,i.e., TiO2ASD on SiO2followed by W ASD on Si–H. Experiments also show capacity for self-aligned dielectric patterningviafavorable deposition of AlF3on Al2O3at 240 °C with simultaneous atomic layer etching of sacrificial ZnO. Simultaneous deposition and etching provides opportunities for low-temperature bottom-up self-aligned patterning for electronic and other nanoscale systems.