Effects of sub-bandgap illumination on electrical properties and detector performances of CdZnTe:In
Effects of sub-bandgap illumination on electrical properties and detector performances of CdZnTe:In
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DOI：
10.1063/1.4883403
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发表时间：
2014-06
影响因子：
4
通讯作者：
Lingyan Xu;W. Jie;G. Zha;Tao Feng;Ning Wang;Shouzhi Xi;Xu Fu;Wenlong Zhang;Yadong Xu;Tao Wang
中科院分区：
文献类型：
--
作者：
Lingyan Xu;W. Jie;G. Zha;Tao Feng;Ning Wang;Shouzhi Xi;Xu Fu;Wenlong Zhang;Yadong Xu;Tao Wang
讨论了亚带隙照明对CdZnTe：In晶体电学性质和探测器光谱性能的影响。载流子在深阱中通过热跃迁和光跃迁的激发过程可用修正的Shockley-Read-Hall模型描述。深施主的电离概率在光照下显示出增加，这应该是负责的电性能的变化与红外（IR）照射的CdZnTe块体材料。应用欧姆定律、扩散模型和界面层电子扩散理论，得到了受照晶体中体电阻率的降低和空间电荷密度的增加。此外，光照诱导电离将进一步有助于改善载流子输运特性和电荷收集效率。因此，在标准工作环境下应用红外辐照对改善CdZnTe辐射探测器的光谱特性具有重要意义。
The effects of sub-bandgap illumination on electrical properties of CdZnTe:In crystals and spectroscopic performances of the fabricated detectors were discussed. The excitation process of charge carriers through thermal and optical transitions at the deep trap could be described by the modified Shockley-Read-Hall model. The ionization probability of the deep donor shows an increase under illumination, which should be responsible for the variation of electrical properties within CdZnTe bulk materials with infrared (IR) irradiation. By applying Ohm's law, diffusion model and interfacial layer-thermionic-diffusion theory, we obtain the decrease of bulk resistivity and the increase of space charge density in the illuminated crystals. Moreover, the illumination induced ionization will further contribute to improving carrier transport property and charge collection efficiency. Consequently, the application of IR irradiation in the standard working environment is of great significance to improve the spectroscopic characteristics of CdZnTe radiation detectors.