Effects of sequential tungsten and helium ion implantation on nano-indentation hardness of tungsten
Effects of sequential tungsten and helium ion implantation on nano-indentation hardness of tungsten
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DOI：
10.1063/1.4811825
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发表时间：
2013-06-24
影响因子：
4
通讯作者：
Roberts, S. G.
中科院分区：
文献类型：
--
作者：
Armstrong, D. E. J.;Edmondson, P. D.;Roberts, S. G.
为了模拟中子和氦在聚变反应堆第一壁连续自离子注入高达13 dpa，然后由氦离子注入高达3000 appm的损伤层进行类似于2 μ m深的纯钨。这些层的硬度使用纳米压痕测量，并使用透射电子显微镜进行了研究。在氦注入区域中观察到显著的硬度增加，在已经被自离子注入的区域中硬度增加较小，因此包含预先存在的位错环。这表明，对于相同的氦含量，氦被困在分布的空位中比氦被困在凝聚成位错环的空位中提供更强的硬化。(C)2013 AIP Publishing LLC.
To simulate neutron and helium damage in a fusion reactor first wall sequential self-ion implantation up to 13 dpa followed by helium-ion implantation up to 3000 appm was performed to produce damaged layers of similar to 2 mu m depth in pure tungsten. The hardness of these layers was measured using nanoindentation and was studied using transmission electron microscopy. Substantial hardness increases were seen in helium implanted regions, with smaller hardness increases in regions which had already been self-ion implanted, thus, containing pre-existing dislocation loops. This suggests that, for the same helium content, helium trapped in distributed vacancies gives stronger hardening than helium trapped in vacancies condensed into dislocation loops. (C) 2013 AIP Publishing LLC.