Very high growth rate chemical vapor deposition of single-crystal diamond
Very high growth rate chemical vapor deposition of single-crystal diamond
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DOI：
10.1073/pnas.152464799
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发表时间：
2002-10-01
影响因子：
11.1
通讯作者：
Hemley, RJ
中科院分区：
文献类型：
--
作者：
Yan, CS;Vohra, YK;Hemley, RJ
金刚石具有非凡的材料特性，这一结果引起了广泛的科学和技术应用。本文报道了用微波等离子体化学气相沉积（MPCVD）技术成功地制备出高质量的单晶金刚石。金刚石单晶具有光滑、透明的表面和与高压、高温合成金刚石相同的其他特性。此外，晶体可以以50至150 μ m/h的生长速率生产，这比用于制造多晶MPCVD金刚石的标准方法高出多达2个数量级。这种高质量的单晶MPCVD金刚石可以在电子设备中找到许多应用，如高强度窗口和需要大单晶砧的新一代高压仪器。
Diamond possesses extraordinary material properties, a result that has given rise to a broad range of scientific and technological applications. This study reports the successful production of high-quality single-crystal diamond with microwave plasma chemical vapor deposition (MPCVD) techniques. The diamond single crystals have smooth, transparent surfaces and other characteristics identical to that of high-pressure, high-temperature synthetic diamond. In addition, the crystals can be produced at growth rates from 50 to 150 mum/h, which is up to 2 orders of magnitude higher than standard processes for making polycrystalline MPCVD diamond. This high-quality single-crystal MPCVD diamond may find numerous applications in electronic devices as high-strength windows and in a new generation of high-pressure instruments requiring large single-crystal anvils.