Switching of single-electron oscillations in dual-gated nanocrystalline silicon point-contact transistors
Switching of single-electron oscillations in dual-gated nanocrystalline silicon point-contact transistors
复制标题
双栅纳米晶硅点接触晶体管中单电子振荡的切换
DOI：
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发表时间：
2003
期刊：
影响因子：
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通讯作者：
Z. Durrani
中科院分区：
文献类型：
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作者：
M. Khalafalla;H. Mizuta;Z. Durrani
在纳米硅薄膜制备的点接触晶体管中观察到了单电子输运的开关现象，其晶粒度为/SPL sim/10~40 nm。这种效应可能与颗粒间的静电耦合有关。在4.2K时，器件电流中的单电子振荡作为两个独立栅极上的电压的函数进行切换。利用单电子蒙特卡罗模拟对两个带电颗粒平行和晶间电容耦合的模型进行了进一步的研究。一个颗粒的电子数的变化是由于单个电子对另一个颗粒的充电，导致电荷稳定性随栅极电压变化的双稳区。这些效应不仅取决于耦合电容，而且还取决于颗粒和两个栅极之间的交叉电容。
Switching of single-electron transport is observed in point-contact transistors fabricated in nanocrystalline silicon thin films, where the grain size is /spl sim/10 to 40 nm. The effects may be associated with electrostatic coupling between the grains. At 4.2 K, single-electron oscillations in the device current are switched as a function of the voltages on two separate gates. This is investigated further using single-electron Monte Carlo simulation of a model with two charging grains in parallel and intergrain capacitive coupling. A change in the electron number of a grain occurs due to charging of the other grain by a single electron, causing bistable regions in charge stability versus gate voltage. These effects depend not only on the coupling capacitance but also on the cross capacitances between the grains and the two gates.