Low temperature silicon dioxide by thermal atomic layer deposition: Investigation of material properties
Low temperature silicon dioxide by thermal atomic layer deposition: Investigation of material properties
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DOI：
10.1063/1.3327430
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发表时间：
2010-03-15
影响因子：
3.2
通讯作者：
Zacharias, M.
中科院分区：
文献类型：
--
作者：
Hiller, D.;Zierold, R.;Zacharias, M.
SiO2是最广泛使用的介电材料，但其生长或沉积涉及高热预算或遭受遮蔽效应。本文介绍的通过热原子层沉积（ALD）制备SiO2的低温方法（150 ℃）提供了完美的均匀性和表面覆盖，甚至可以覆盖纳米级孔，这可能非常适合纳米电子学和纳米技术的最新需求。基于3-氨丙基三乙氧基硅烷、水和臭氧的ALD反应可提供出色的SiO2质量，并且不含催化剂或腐蚀性副产物。各种光学，结构和电学性质的研究通过红外光谱，紫外-可见光谱，二次离子质谱，电容-电压和电流-电压测量，电子自旋共振，卢瑟福背散射，弹性反冲检测分析，原子力显微镜，和可变角度光谱椭圆偏振。许多功能，如光学常数（n，k）和光学传输和表面粗糙度（1.5 A度），被发现是类似的热氧化物的质量。在1000摄氏度下的快速热退火（RTA）被证明可以显著改善某些性能，特别是通过降低氢氟酸中的蚀刻速率、氧化物电荷和界面缺陷。除了少量的OH基团和几个原子/千分之一的氮的氧化物中剩余的生长和可固化的RTA没有杂质可以跟踪。总而言之，数据指向二氧化硅的第一可靠的低温ALD生长工艺。
SiO2 is the most widely used dielectric material but its growth or deposition involves high thermal budgets or suffers from shadowing effects. The low-temperature method presented here (150 degrees C) for the preparation of SiO2 by thermal atomic layer deposition (ALD) provides perfect uniformity and surface coverage even into nanoscale pores, which may well suit recent demands in nanoelectronics and nanotechnology. The ALD reaction based on 3-aminopropyltriethoxysilane, water, and ozone provides outstanding SiO2 quality and is free of catalysts or corrosive by-products. A variety of optical, structural, and electrical properties are investigated by means of infrared spectroscopy, UV-Vis spectroscopy, secondary ion mass spectrometry, capacitance-voltage and current-voltage measurements, electron spin resonance, Rutherford backscattering, elastic recoil detection analysis, atomic force microscopy, and variable angle spectroscopic ellipsometry. Many features, such as the optical constants (n, k) and optical transmission and surface roughness (1.5 A degrees), are found to be similar to thermal oxide quality. Rapid thermal annealing (RTA) at 1000 degrees C is demonstrated to significantly improve certain properties, in particular by reducing the etch rate in hydrofluoric acid, oxide charges, and interface defects. Besides a small amount of OH groups and a few atomic per mille of nitrogen in the oxide remaining from the growth and curable by RTA no impurities could be traced. Altogether, the data point to a first reliable low temperature ALD-growth process for silicon dioxide.