Semiconductor Lasers : Stability , Instability and Chaos
Semiconductor Lasers : Stability , Instability and Chaos
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DOI:
10.1007/978-3-642-30147-6
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发表时间:
2013
期刊:
影响因子:
--
通讯作者:
J. Ohtsubo
中科院分区:
文献类型:
--
作者:
J. Ohtsubo
In this chapter, we discuss the oscillation conditions for semiconductor lasers and, then, derive the rate equations, which are the starting points of the study of chaotic dynamics in semiconductor lasers. The semiconductor laser described here is a Fabry-Perot type with a mono-layer of the active region, however other narrow-stripe edge-emitting lasers such as multi-quantum well (MQW) lasers and distributed feedback (DFB) lasers can be theoretically treated in the same manner as Fabry-Perot lasers. Therefore, the macroscopic features of these lasers show the same behaviors from the viewpoint of chaotic dynamics, although the detailed characteristics strongly depend on the laser structure and the particular values of the device parameters. The relaxation oscillation frequency, which is calculated from the rate equations, plays an important role for the dynamics of semiconductor lasers. The Langevin terms, which are stochastic noise effects induced by spontaneous emission of light in the laser medium, are introduced in the rate equations. Some other fundamental characteristics of semiconductor lasers are also discussed.