Study of silicon photomultiplier performance in external electric fields
Study of silicon photomultiplier performance in external electric fields
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硅光电倍增管在外电场下的性能研究
DOI：
10.1088/1748-0221/13/09/t09006
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发表时间：
2018-09-01
影响因子：
1.3
通讯作者：
Ziegler, T.
中科院分区：
文献类型：
--
作者：
Sun, X. L.;Tolba, T.;Ziegler, T.
我们报告的硅光电倍增管（SiPM）光传感器的性能在电场强度高达30 kV/cm，并在149 K的温度下，相对于他们的性能在没有外部电场。在这项研究中使用的SiPM设备显示稳定的增益，光子探测效率，和相关脉冲的速率，当暴露于外部场，在估计的不确定性。暴露未对器械表面造成可见损坏。
We report on the performance of silicon photomultiplier (SiPM) light sensors operating in electric field strength up to 30 kV/cm and at a temperature of 149 K, relative to their performance in the absence of an external electric field. The SiPM devices used in this study show stable gain, photon detection efficiency, and rates of correlated pulses, when exposed to external fields, within the estimated uncertainties. No visible damage to the surface of the devices was caused by the exposure.