Enhanced H2S gas sensing properties of undoped ZnO nanocrystalline films from QDs by low-temperature processing
Enhanced H2S gas sensing properties of undoped ZnO nanocrystalline films from QDs by low-temperature processing
复制标题
通过低温处理增强 QD 未掺杂 ZnO 纳米晶薄膜的 H2S 气体传感性能
DOI：
10.1016/j.snb.2015.10.022
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发表时间：
2016-03-01
影响因子：
8.4
通讯作者：
Zheng, Zhiping
中科院分区：
文献类型：
--
作者：
Deng, Jianfeng;Fu, Qiuyun;Zheng, Zhiping
采用旋涂法制备了3.8nm的ZnO量子点H2S气敏薄膜。低温处理后的ZnO薄膜的灵敏度大大提高，晶粒尺寸保持在2倍德拜长度以下。提出了一种改进的平带图来解释这一重大改进。比较了不同退火温度下ZnO薄膜的响应特性，发现传感器具有快速的响应和恢复特性。ZnO薄膜对68.5ppm的H2S的响应在室温下为相对较高的值75，在90 ℃时达到其最高值567。90 ℃的最佳工作温度与其他基于ZnO的气体传感器相比相对较低。同时，ZnO薄膜对H2S对SO2，NO2和NH3表现出良好的选择性。(C)2015 Elsevier B.V.版权所有。
H2S gas sensitive films based on ZnO QDs of 3.8 nm were prepared through a spin-coating process. The sensitivity of ZnO films was greatly improved after low-temperature processing and grain sizes remained below twice Debye length. A modified flat band diagram was proposed to explain this great improvement. The comparison of responses of ZnO films annealed at different temperatures was made and the sensors exhibited quick response and recovery. The response of ZnO films toward H2S of 68.5 ppm was a relatively high value of 75 at room temperature, which reached its highest value of 567 at 90 degrees C. The optimal operating temperature of 90 degrees C is relatively low compared to other gas sensors based on ZnO. Meanwhile, ZnO films showed good selectivity toward H2S against SO2, NO2 and NH3. (C) 2015 Elsevier B.V. All rights reserved.