Surface-modified quantum-dot floating layer using novel thiol with large dipole moment for improved feasibility of light-erasable organic transistor memory applications
Surface-modified quantum-dot floating layer using novel thiol with large dipole moment for improved feasibility of light-erasable organic transistor memory applications
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DOI：
10.1016/j.jiec.2020.01.031
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发表时间：
2020-05
影响因子：
6.1
通讯作者：
Cheulhwan Kim;Jae Young Kim;Kanghuck Lee;Sun-young Jung;D. Yun;T. An;H. S. Lee;Y. Jeong;Jihoon Lee
中科院分区：
文献类型：
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作者：
Cheulhwan Kim;Jae Young Kim;Kanghuck Lee;Sun-young Jung;D. Yun;T. An;H. S. Lee;Y. Jeong;Jihoon Lee
在这项研究中，一个新的功能硫醇与五氟苯基基团的合成用于表面修饰的CdSe量子点浮层，这是针对制造的有机场效应晶体管（OFFERS）。氟化硫醇的偶极矩和表面性质被用来控制晶体管的操作;这些硫醇作为表面改性剂的CdSe量子点浮动层中的OFFERS。此外，新的官能硫醇表现出更大的偶极矩比商业的2，3，4，5，6-五氟苯硫酚。包含具有五氟苯基的新官能硫醇的OFET用作常导通晶体管，并且在非破坏性阅读期间表现出负电流状态。此外，它表现出敏感的响应，只有电和光的偏见，这表明它的光响应闪存应用的可行性。
In this study, a new functional thiol with a pentafluorophenyl group was synthesized for the surface modification of CdSe quantum-dot floating layers; this was aimed at the fabrication of organic field-effect transistors (OFETs). The dipole moments and surface properties of the fluorinated thiols were used to control the transistor operations; these thiols acted as surface modifiers of the CdSe quantum-dot floating layers in the OFETs. Further, the new functional thiol exhibited a larger dipole moment than that of the commercial 2,3,4,5,6-pentafluorothiophenol. The OFET comprising the new functional thiol with the pentafluorophenyl group functioned as a normally ON transistor and exhibited bistable current states during nondestructive reading. In addition, it exhibited sensitive responses to electrical-only and light-only biases, which demonstrates its feasibility for light-responsive flash memory applications.