Nonlinear absorption properties and carrier dynamics in MoS2/Graphene van der Waals heterostructures
Nonlinear absorption properties and carrier dynamics in MoS2/Graphene van der Waals heterostructures
复制标题
MoS2/石墨烯范德华异质结构中的非线性吸收特性和载流子动力学
DOI：
10.1016/j.carbon.2020.04.092
复制
发表时间：
2020-09
期刊：
影响因子：
10.9
通讯作者：
Hou Xun
中科院分区：
文献类型：
--
作者：
Xu Yanmin;Yan Lihe;Si Jinhai;Li Ming;Ma Yaoyao;Li Jianlin;Hou Xun
Recently, molybdenum disulfide (MoS2) nanosheets have been used in passively mode-locked laser due to excellent saturable absorption (SA) property. To enhance their optical nonlinearity, some heterostructures such as MoS2/Graphene (MoS2/G) have been designed, but the carrier dynamics in the materials have rarely been reported. Here, the nonlinear response of MoS2and MoS2/G heterostructures nanosheets with different thickness are studied via nanosecond laser Z-scan and femtosecond time-resolved transient absorption (TA) technique. The results reveal that the ground state bleaching take place under intense laser excitation, which would block the further absorption of incident light, causing a strong SA effect of the materials. With increasing the thickness of MoS2, electron diffusion take place between adjacent layers, resulting in a slow recombination of excited carriers and the enhancement of SA effect in MoS2. In MoS2/G, excited electrons could transfer from MoS2to graphene and the interlayer carrier diffusion in MoS2could be enhanced, prolonging the decay time of ground state bleaching effect. The slower carrier relaxation time in MoS2would lead a stronger SA effect for nanosecond laser pulse. This work could provide an effective strategy for designing saturable absorbers in mode-locked lasers using MoS2heterostructures.
登录
查看更多内容
二维MoS2纳米片的超快饱和吸收
影响因子：
17.1
作者：
Wang, Kangpeng;Wang, Jun;Blau, Werner Josef
通讯作者：
Blau, Werner Josef
MoTe2/MoS2 纳米复合薄膜的能带排列可增强非线性光学性能
影响因子：
5.4
作者：
Quan, Chenjing;Lu, Chunhui;Xu, Xinlong
通讯作者：
Xu, Xinlong
影响因子：
38.3
作者：
Hong, Xiaoping;Kim, Jonghwan;Wang, Feng
通讯作者：
Wang, Feng
影响因子：
3.7
作者：
M. Lorke;T. Nielsen;J. Seebeck;P. Gartner;F. Jahnke
通讯作者：
M. Lorke;T. Nielsen;J. Seebeck;P. Gartner;F. Jahnke
通过化学气相沉积法生长的少层 MoS2 作为可调谐掺铒光纤激光器的无源 Q 开关
影响因子：
7.6
作者：
Xia H;ing;Li Heping;Lan Changyong;Li Chun;Du Jinbo;Zhang Shangjian;Liu Yong
通讯作者：
Liu Yong