Morphology of nanoholes formed in silicon by wet etching in solutions containing HF and H2O2 at different concentrations using silver nanoparticles as catalysts
Morphology of nanoholes formed in silicon by wet etching in solutions containing HF and H2O2 at different concentrations using silver nanoparticles as catalysts
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DOI：
10.1016/j.electacta.2007.01.035
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发表时间：
2007-11-20
影响因子：
6.6
通讯作者：
Matsumura, Michio
中科院分区：
文献类型：
--
作者：
Tsujino, Kazuya;Matsumura, Michio
利用银纳米颗粒作为催化剂，在含有氢氟酸和过氧化氢的水溶液中，在Si（100）中钻出直径为数十纳米的孔。当过氧化氢浓度为0时，孔洞沿[100]方向生长较深。18米。除了这些垂直孔之外，在样品表面附近的（100）方向上产生与表面水平的孔。我们发现，在[100]方向上形成深孔的银颗粒比在表面附近形成水平孔的颗粒更球形。这些结果表明，银颗粒的形状是控制空穴方向的重要因素。当过氧化氢浓度增加到1.8 M以及垂直和水平孔时，在顶面区域形成微孔层。另一方面，当过氧化氢浓度降低到0.00 × 18M时，孔没有显示出对生长方向的任何偏好，并且是弯曲的。即使在不含过氧化氢的HF溶液中，如果溶液含有氧，则在随机方向上以非常慢的速率产生空穴。(C)2007爱思唯尔有限公司保留所有权利。
Holes with diameters of tens of nanometers were bored in Si(100) in aqueous solutions containing hydrofluoric acid and hydrogen peroxide utilizing silver nanoparticles as catalysts. The holes grew deeply in the [100] direction when the concentration of hydrogen peroxide was about 0. 18 M. In addition to these vertical holes, holes were generated horizontal to the surface in the (100) directions near the surface of the sample. We found that the silver particles making the deep holes in the [100] direction were more spherical than those making the horizontal holes near the surface. These results indicate that the shape of the silver particles is an important factor controlling the direction of the holes. When the hydrogen peroxide concentration was increased to 1.8 M, as well as the vertical and horizontal holes, a microporous layer was formed on the top surface region. On the other hand, when the hydrogen peroxide concentration was lowered to 0.00 18 M, holes did not show any preference for growing direction and were crooked. Even in HF solutions that did not contain hydrogen peroxide, holes were generated at a very slow rate in random directions if the solutions contained oxygen. (C) 2007 Elsevier Ltd. All rights reserved.