On time-dependent relaxation-times in semiconductors far from equilibrium
On time-dependent relaxation-times in semiconductors far from equilibrium
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DOI：
10.1016/0022-3697(84)90118-5
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发表时间：
1984
影响因子：
4
通讯作者：
Á. R. Vasconcellos;R. Luzzi
中科院分区：
文献类型：
--
作者：
Á. R. Vasconcellos;R. Luzzi
长期以来，人们习惯用速率方程中散射算符的松弛时间碰撞算符近似来研究物质的输运性质。在远离平衡状态的多体系统中，这种技术的应用受到严重限制。这是样品中发生的强弛豫效应的结果，当系统被探测时，弛豫效应在系统的宏观状态中产生了很大的变化。本文讨论了光激发极性半导体的情况，并得到了相关输运系数随时间变化的表达式。
It has long been customary to perform studies of transport properties in matter in terms of a relaxation-time collision operator approximation for the scattering operators in the rate equations. In many-body systems in far-from-equilibrium conditions the application of such a technique is severely limited. This is a consequence of the strong relaxation effects that take place in the sample, which produce large variations in the macroscopic state of the system while it is probed. We discuss here the case of photoexcited polar semiconductors, and we have obtained expressions for the time-dependence of the relevant transport coefficients.