Accurate Linear Model for SET Critical Charge Estimation
Accurate Linear Model for SET Critical Charge Estimation
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DOI：
10.1109/tvlsi.2009.2020391
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发表时间：
2009-08
影响因子：
2.8
通讯作者：
Daniele Rossi;J. M. Cazeaux;Martin Omaña;C. Metra;A. Chatterjee
中科院分区：
文献类型：
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作者：
Daniele Rossi;J. M. Cazeaux;Martin Omaña;C. Metra;A. Chatterjee
在这篇文章中，我们提出了一个精确的线性模型，用于估计一个高能粒子撞击组合电路节点可能产生的幅度大于后续门的噪声容限的集合所收集的最小电荷量。该电荷值将被称为设置临界电荷(QSET)。我们提出的模型允许计算作为驱动节点的门和扇出门(S)的晶体管尺寸的函数的节点的QSET，而不需要耗时的电平模拟。这使得我们的方法适合集成到电路辐射加固的设计自动化工具中。与HSPICE进行的电平模拟相比，所提出的模型具有96%的平均准确率。此外，它还强调了Q集对驱动节点的栅极的强度的依赖性比对节点总电容的依赖性强得多。这一特性可以通过稳健的设计技术加以考虑，以提高其有效性。
In this paper, we present an accurate linear model for estimating the minimum amount of collected charge due to an energetic particle striking a combinational circuit node that may give rise to a SET with an amplitude larger than the noise margin of the subsequent gates. This charge value will be referred to as SET critical charge (QSET). Our proposed model allows to calculate the QSET of a node as a function of the size of the transistors of the gate driving the node and the fan-out gate(s), with no need for time costly electrical level simulations. This makes our approach suitable to be integrated into a design automation tool for circuit radiation hardening. The proposed model features 96% average accuracy compared to electrical level simulations performed by HSPICE. Additionally, it highlights that Q SET has a much stronger dependence on the strength of the gate driving the node, than on the node total capacitance. This property could be considered by robust design techniques in order to improve their effectiveness.