High-Performance Room-Temperature UV-IR Photodetector Based on the InAs Nanosheet and Its Wavelength- and Intensity-Dependent Negative Photoconductivity
High-Performance Room-Temperature UV-IR Photodetector Based on the InAs Nanosheet and Its Wavelength- and Intensity-Dependent Negative Photoconductivity
复制标题
基于 InAs 纳米片及其波长和强度依赖性负光电导性的高性能室温紫外-红外光电探测器
DOI：
10.1021/acsami.1c05226
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发表时间：
2021
影响因子：
9.5
通讯作者：
Chen Qing
中科院分区：
文献类型：
--
作者：
Wang Xinzhe;Pan Dong;Sun Mei;Lyu Fengjiao;Zhao Jianhua;Chen Qing
低维窄带隙III-V族半导体在高性能电子学、光子学和量子器件中具有巨大潜力。然而，基于隔离二维（2D）III-V化合物半导体的高性能纳米级红外光电探测器仍然很少见。在这项工作中，我们展示了一种基于 InAs 纳米片的新型光电探测器。该光电探测器在室温下在紫外-红外波段（325-2100 nm）具有高光电响应。该高性能光电探测器在低工作电压 (∼0.1 V) 下对 700 nm 光具有非常高的响应度 (∼1231 A/W)、EQE (2.2 × 105%) 和探测率 (5.46 × 1010Jones)。这些结果表明，二维InAs纳米片器件在纳米光电器件和集成光电器件方面具有巨大的潜力。此外，我们首次观察到InAs纳米片器件具有负光电导率（NPC），该光电导率不仅受波长影响，还与光的光功率强度有关。经过对实验数据的分析，我们提出NPC的起源可能来自于电子俘获，光电响应过程中光吸收和光门效应两种相互竞争的机制导致了对光波长和光功率强度的依赖。
Low-dimensional narrow-band-gap III–V semiconductors have great potential in high-performance electronics, photonics, and quantum devices. However, high-performance nanoscale infrared photodetectors based on isolated two-dimensional (2D) III–V compound semiconductors are still rare. In this work, we demonstrate a new type of photodetector based on the InAs nanosheet. The photodetector has high optoelectronic response in the ultraviolet-infrared band (325–2100 nm) at room temperature. The high-performance photodetector has very high responsivity (∼1231 A/W), EQE (2.2 × 105%), and detectivity (5.46 × 1010Jones) to 700 nm light at low operating voltage (∼0.1 V). These results indicate that 2D InAs nanosheet devices have great potential in nano-optoelectronic devices and integrated optoelectronic devices. In addition, we observe for the first time that the InAs nanosheet devices have a negative photoconductivity (NPC) that is not only affected by the wavelength but also related to the optical power intensity of the light. After analyzing experimental data, we propose that the origin of the NPC may come from electron trapping, and two competing mechanisms of optical absorption and the photogating effect in the photoelectric response process cause the dependence on the light wavelength and optical power intensity.