Metal/ferroelectric/insulator/semiconductor structure of Pt/SrBi2Ta2O9/YMnO3/Si using YMnO3 as the buffer layer
Metal/ferroelectric/insulator/semiconductor structure of Pt/SrBi2Ta2O9/YMnO3/Si using YMnO3 as the buffer layer
复制标题
DOI：
10.1063/1.124255
复制
发表时间：
1999-07
影响因子：
4
通讯作者：
Kyu-jeong Choi;W. Shin;Jung-Hwan Yang;Soon-Gil Yoon
中科院分区：
文献类型：
--
作者：
Kyu-jeong Choi;W. Shin;Jung-Hwan Yang;Soon-Gil Yoon
分别采用脉冲激光烧蚀法和金属有机化学气相沉积法制备了用于金属/铁电/绝缘体/半导体（MFIS）结构的铁电缓冲层SrBi 2 Ta 2 O 9（SBT）和YMnO 3。当栅电压从2 V变化到6 V时，MFIS结构的存储窗口在0.3 V到1.5 V之间。在900 °C退火的MFIS结构中，铁电SBT和Si之间没有反应。YMnO 3缓冲层在缓解SBT和Si元素之间的互扩散方面起着重要作用。Pt/200 nm-SBT/25 nm-YMnO 3/Si的MFIS结构对于非破坏性读出铁电随机存取存储器应用是有吸引力的。
The ferroelectric SrBi2Ta2O9 (SBT) and YMnO3 buffer layers for the metal/ferroelectric/ insulator/semiconductor (MFIS) structure were deposited using pulsed-laser ablation and metalorganic chemical vapor deposition, respectively. Memory windows of the MFIS structure were in the range of 0.3–1.5 V when the gate voltage varied from 2 to 6 V. There were no reactions between ferroelectric SBT and Si in the MFIS structure annealed at 900 °C. The YMnO3 buffer layer plays an important role in alleviating the interdiffusion between elements of SBT and Si. The proposed MFIS structure of Pt/200 nm–SBT/25 nm–YMnO3/Si is attractive for nondestructive read-out ferroelectric random access memory applications.