Growth of High Material Quality Group III-Antimonide Semiconductor Nanowires by a Naturally Cooling Process.
Growth of High Material Quality Group III-Antimonide Semiconductor Nanowires by a Naturally Cooling Process.
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采用自然冷却工艺生长高品质 III 族锑化物半导体纳米线
DOI：
10.1186/s11671-016-1443-4
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发表时间：
2016-12
影响因子：
--
通讯作者：
Xu HQ
中科院分区：
文献类型：
--
作者：
Li K;Pan W;Wang J;Pan H;Huang S;Xing Y;Xu HQ
我们报告了一个简单但功能强大的方法来生长高材料质量的InSb和GaSb纳米线在常用的管式炉设置。该方法采用在高温下稳定加热然后自然冷却至室温的过程，在自然冷却步骤期间有效地发生纳米线生长。生长的纳米线进行分析，使用扫描电子显微镜和透射电子显微镜配备了能量色散X射线光谱设置。结果表明，生长的纳米线长度为几个微米，是锌掺杂的InSb和GaSb晶体。FET器件也与生长的纳米线制造和研究。结果表明，所生长的纳米线具有良好的电学性能，在纳米电子学和红外光电子学领域具有潜在的应用前景。
We report on a simple but powerful approach to grow high material quality InSb and GaSb nanowires in a commonly used tube furnace setup. The approach employs a process of stable heating at a high temperature and then cooling down naturally to room temperature with the nanowire growth occurred effectively during the naturally cooling step. As-grown nanowires are analyzed using a scanning electron microscope and a transmission electron microscope equipped with an energy-dispersive X-ray spectroscopy setup. It is shown that the grown nanowires are several micrometers in lengths and are zincblende InSb and GaSb crystals. The FET devices are also fabricated with the grown nanowires and investigated. It is shown that the grown nanowires show good, desired electrical properties and should have potential applications in the future nanoelectronics and infrared optoelectronics.