Direct verification of energy back transfer from Yb 4f‐shell to InP host
Direct verification of energy back transfer from Yb 4f‐shell to InP host
复制标题
直接验证从 Yb 4f-壳层到 InP 主体的能量回传
DOI：
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发表时间：
1992
期刊：
影响因子：
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通讯作者：
K. Takahei
中科院分区：
文献类型：
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作者：
A. Taguchi;M. Taniguchi;K. Takahei
我们直接验证了从Yb4f壳层到InP基质的能量回传，这被认为是4f壳层内发光的本征热猝灭的一种猝灭机制。研究了掺Yb的InP样品的带边相关发光的光致发光时间衰减。在100~120K的温度范围内，观察到发光时间-衰减曲线由两个指数衰减分量组成。带边相关发光中慢组分的衰减时间常数与Yb4f壳层发光中的相同。这一事实清楚地表明，Yb 4f壳层电子态和InP主电子态之间存在能量转移，能量反向转移机制是Yb 4f壳层内发光本征热猝灭的原因。
We report direct verification of energy back transfer from a Yb 4f‐shell to an InP host, which has been proposed as a quenching mechanism for the intrinsic thermal quenching of intra‐4f‐shell luminescence. Photoluminescence time decay of the band‐edge related luminescence for a Yb‐doped InP sample was examined. In the temperature region from 100 to 120 K, it was observed that the luminescence time‐decay curve is composed of two exponential decay components. The decay‐time constant of the slower component in the band‐edge related luminescence is the same as that in the Yb 4f‐shell luminescence. This fact clearly shows that there is an energy transfer between the Yb 4f‐shell electronic state and the InP host electronic state, and the energy back‐transfer mechanism is the cause of the intrinsic thermal quenching of the Yb intra‐4f‐shell luminescence.