Epitaxial growth of nonpolar ZnO by MOVPE
Epitaxial growth of nonpolar ZnO by MOVPE
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DOI：
10.1002/pssc.200564656
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发表时间：
2006-03
期刊：
影响因子：
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通讯作者：
T. Moriyama;S. Fujita
中科院分区：
文献类型：
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作者：
T. Moriyama;S. Fujita
研究了非极性（M面和A面）ZnO在M面和R面蓝宝石衬底上的外延生长特性。ZnO沿着c轴方向的生长在较低的生长温度和/或VI/II比下实现，所述c轴方向平行于M面蓝宝石和R面蓝宝石的[2-1-10]和[01-11]方向，并且该生长方向对于平滑的横向生长是优选的。随着生长时间的延长，M面蓝宝石表面变得粗糙，而R面蓝宝石表面的粗糙度明显提高。在R面蓝宝石上的生长行为可以归因于沿ZnO c轴方向的小的晶格失配沿着和增强的横向生长特性。从光致发光测量，峰在3.383 eV，这是在更高的能量相比，众所周知的杂质和/或缺陷相关的峰，在10 K的外观表明在ZnO薄膜中的残余应变。（© 2006 WILEY-VCH Verlag GmbH & Co. KGaA，魏因海姆）
Epitaxial growth characteristics of nonpolar (M- and A-plane) ZnO on M- and R-plane sapphire substrates were investigated. The growth of ZnO along the c-axis direction, which aligns parallel to [2-1-10] and [01-11] directions of M- and R-plane sapphire, is achieved under lower growth temperature and/or VI/II ratio, and this growth direction is preferable for smooth lateral growth. Increasing the growth time, the surface becomes rough on M-plane, while is significantly improved on R-plane sapphire. The growth behaviour on R-plane sapphire can be attributed to the small lattice mismatching along the ZnO c-axis direction and enhanced lateral growth characteristics. From photoluminescence measurements, the appearance of peak at 3.383 eV, which is at higher energy compared to well-known impurity- and/or defect-related peaks, at 10 K suggests the residual strain in ZnO films. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)